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Electrical property evolution in the graphitization process of activated carbon by high-pressure sintering

  • J. G. Zhao*
  • , L. X. Yang
  • , F. Y. Li
  • , R. C. Yu
  • , C. Q. Jin
  • *Corresponding author for this work
  • CAS - Institute of Physics

Research output: Contribution to journalArticlepeer-review

Abstract

Activated carbon was treated at 5.0 GPa up to 1600 °C, and the electrical property evolution in the graphitization process was investigated. The change of structure results in the corresponding electrical property transition. For the samples at low high-pressure sintering temperature, the variable-range hopping is the main electrical transportation mechanism. The graphitized activated carbon is a semimetal while the high-pressure sintering temperature is lower than 1300 °C and behaves non-Fermi-liquid property at higher sintering temperature. The ratio of resistivity at ∼5.0 and ∼300.0 K versus high-pressure sintering temperature is drastically decreasing near the graphitization temperature, which indicates that the insulator-metal transition occurs in the sintering temperature range of 900-1000 °C.

Original languageEnglish
Pages (from-to)1947-1950
Number of pages4
JournalSolid State Sciences
Volume10
Issue number12
DOIs
StatePublished - Dec 2008
Externally publishedYes

Keywords

  • Activated carbon
  • Electrical properties
  • Graphitization
  • High pressure

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