@inproceedings{6c38764b2e78485e91399bfd56def192,
title = "Electrical characteristics of CuS/ZnO PN heterojunction",
abstract = "A large area of N-ZnO/P-CuS junction arrays on silicon wafer is successfully fabricated by the method of layer-by-layer deposition cycle. The thicknesses of CuS shell are tuned by controlling the times of layer-by-layer deposition cycle. Three samples with different CuS shell thicknesses are fabricated and their J-V characteristics show good rectification behavior. The threshold voltages are about 2.5 V at the voltage scans of ± 3 V. The field emission properties of three samples are inveatigated. The turn-on fields of three samples are 6.15 V/μm, 8.75 V/μm, and 10.59 V/μm, respectively. The threshold fields of three samples are 10.46 V/μm, 13.71 V/μm, and 15.2 V/μm, respectively.",
keywords = "Field emission, Layer-by-layer, Nanorod arrays",
author = "Xuemin Qian and Jianxing Fang and Yinglin Song",
year = "2009",
doi = "10.1117/12.835498",
language = "英语",
isbn = "9780819476623",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "International Symposium on Photoelectronic Detection and Imaging 2009 - Material and Device Technology for Sensors",
note = "International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors ; Conference date: 17-06-2009 Through 19-06-2009",
}