Electrical and optical properties of laser irradiation treated vertical light-emitting diodes

H. K. Sung; C. Wang; N. Y. Kim

doi:10.1049/el.2016.0507

Electrical and optical properties of laser irradiation treated vertical light-emitting diodes

H. K. Sung
, C. Wang
, N. Y. Kim^*

^*Corresponding author for this work

Kwangwoon University
Korea Advanced Nano Fab Center

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A comparative analysis of the properties of vertical light-emitting diodes (VLEDs) fabricated using different surface treatment schemes was conducted. Compared with a conventional VLED, a light output power increase of 24.8% for an injection current of 350 mA was achieved by an n-type-gallium nitride (GaN)-based VLED with a thin undoped GaN layer and microsized protrusions produced by krypton fluoride laser irradiation using an energy density of 600 mJ/cm². This was accomplished without noticeable degradation of the electrical properties of the device. Further, potassium hydroxide wet etching of the VLED surface increased the light output power gain to 47.3% for the same injection current.

Original language	English
Pages (from-to)	1041-1043
Number of pages	3
Journal	Electronics Letters
Volume	52
Issue number	12
DOIs	https://doi.org/10.1049/el.2016.0507
State	Published - 9 Jun 2016
Externally published	Yes

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10.1049/el.2016.0507

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title = "Electrical and optical properties of laser irradiation treated vertical light-emitting diodes",

abstract = "A comparative analysis of the properties of vertical light-emitting diodes (VLEDs) fabricated using different surface treatment schemes was conducted. Compared with a conventional VLED, a light output power increase of 24.8\% for an injection current of 350 mA was achieved by an n-type-gallium nitride (GaN)-based VLED with a thin undoped GaN layer and microsized protrusions produced by krypton fluoride laser irradiation using an energy density of 600 mJ/cm2. This was accomplished without noticeable degradation of the electrical properties of the device. Further, potassium hydroxide wet etching of the VLED surface increased the light output power gain to 47.3\% for the same injection current.",

author = "Sung, \{H. K.\} and C. Wang and Kim, \{N. Y.\}",

note = "Publisher Copyright: {\textcopyright} The Institution of Engineering and Technology 2016.",

year = "2016",

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doi = "10.1049/el.2016.0507",

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journal = "Electronics Letters",

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T1 - Electrical and optical properties of laser irradiation treated vertical light-emitting diodes

AU - Sung, H. K.

AU - Wang, C.

AU - Kim, N. Y.

PY - 2016/6/9

Y1 - 2016/6/9

N2 - A comparative analysis of the properties of vertical light-emitting diodes (VLEDs) fabricated using different surface treatment schemes was conducted. Compared with a conventional VLED, a light output power increase of 24.8% for an injection current of 350 mA was achieved by an n-type-gallium nitride (GaN)-based VLED with a thin undoped GaN layer and microsized protrusions produced by krypton fluoride laser irradiation using an energy density of 600 mJ/cm2. This was accomplished without noticeable degradation of the electrical properties of the device. Further, potassium hydroxide wet etching of the VLED surface increased the light output power gain to 47.3% for the same injection current.

AB - A comparative analysis of the properties of vertical light-emitting diodes (VLEDs) fabricated using different surface treatment schemes was conducted. Compared with a conventional VLED, a light output power increase of 24.8% for an injection current of 350 mA was achieved by an n-type-gallium nitride (GaN)-based VLED with a thin undoped GaN layer and microsized protrusions produced by krypton fluoride laser irradiation using an energy density of 600 mJ/cm2. This was accomplished without noticeable degradation of the electrical properties of the device. Further, potassium hydroxide wet etching of the VLED surface increased the light output power gain to 47.3% for the same injection current.

UR - https://www.scopus.com/pages/publications/84973327652

U2 - 10.1049/el.2016.0507

DO - 10.1049/el.2016.0507

M3 - 文章

AN - SCOPUS:84973327652

SN - 0013-5194

VL - 52

SP - 1041

EP - 1043

JO - Electronics Letters

JF - Electronics Letters

IS - 12

ER -

Electrical and optical properties of laser irradiation treated vertical light-emitting diodes

Abstract

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