Electrical and microwave dielectric properties of K2Nb8O21 microwires

C. Y. Xu; L. Zhen; J. T. Jiang; C. S. Lao; L. Yang

doi:10.1016/j.ceramint.2009.04.007

Electrical and microwave dielectric properties of K₂Nb₈O₂₁ microwires

C. Y. Xu
, L. Zhen^*
, J. T. Jiang
, C. S. Lao
, L. Yang

^*Corresponding author for this work

Harbin Institute of Technology
Georgia Institute of Technology

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

K₂Nb₈O₂₁ microwires with diameters of several hundred nanometers and lengths up to tens of microns were prepared by molten salt synthesis, and characterized by X-ray diffraction, scanning electron microscopy and transmission electron microscopy. The as-synthesized microwires have semiconductor characteristics with band gap E_g of about 3.1 eV, consistent with electrical transport measurement of single microwire, which gives a resistivity of about 0.46 Ω m at room temperature. Microwave dielectric property measurement at 2-18 GHz shows that K₂Nb₈O₂₁ microwires have a relative low complex permittivity. A weak dielectric relaxation occurs in the 12-16 GHz band due to the free charges polarization on the interfaces between K₂Nb₈O₂₁ microwires and the PVB matrix.

Original language	English
Pages (from-to)	3021-3025
Number of pages	5
Journal	Ceramics International
Volume	35
Issue number	8
DOIs	https://doi.org/10.1016/j.ceramint.2009.04.007
State	Published - Dec 2009
Externally published	Yes

Keywords

Electrical transport property
KNbO microwires
Microwave dielectric property
Molten salt synthesis (MSS)

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10.1016/j.ceramint.2009.04.007

Cite this

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title = "Electrical and microwave dielectric properties of K2Nb8O21 microwires",

abstract = "K2Nb8O21 microwires with diameters of several hundred nanometers and lengths up to tens of microns were prepared by molten salt synthesis, and characterized by X-ray diffraction, scanning electron microscopy and transmission electron microscopy. The as-synthesized microwires have semiconductor characteristics with band gap Eg of about 3.1 eV, consistent with electrical transport measurement of single microwire, which gives a resistivity of about 0.46 Ω m at room temperature. Microwave dielectric property measurement at 2-18 GHz shows that K2Nb8O21 microwires have a relative low complex permittivity. A weak dielectric relaxation occurs in the 12-16 GHz band due to the free charges polarization on the interfaces between K2Nb8O21 microwires and the PVB matrix.",

keywords = "Electrical transport property, KNbO microwires, Microwave dielectric property, Molten salt synthesis (MSS)",

author = "Xu, \{C. Y.\} and L. Zhen and Jiang, \{J. T.\} and Lao, \{C. S.\} and L. Yang",

year = "2009",

month = dec,

doi = "10.1016/j.ceramint.2009.04.007",

language = "英语",

volume = "35",

pages = "3021--3025",

journal = "Ceramics International",

issn = "0272-8842",

publisher = "Elsevier Ltd",

number = "8",

}

TY - JOUR

T1 - Electrical and microwave dielectric properties of K2Nb8O21 microwires

AU - Xu, C. Y.

AU - Zhen, L.

AU - Jiang, J. T.

AU - Lao, C. S.

AU - Yang, L.

PY - 2009/12

Y1 - 2009/12

N2 - K2Nb8O21 microwires with diameters of several hundred nanometers and lengths up to tens of microns were prepared by molten salt synthesis, and characterized by X-ray diffraction, scanning electron microscopy and transmission electron microscopy. The as-synthesized microwires have semiconductor characteristics with band gap Eg of about 3.1 eV, consistent with electrical transport measurement of single microwire, which gives a resistivity of about 0.46 Ω m at room temperature. Microwave dielectric property measurement at 2-18 GHz shows that K2Nb8O21 microwires have a relative low complex permittivity. A weak dielectric relaxation occurs in the 12-16 GHz band due to the free charges polarization on the interfaces between K2Nb8O21 microwires and the PVB matrix.

AB - K2Nb8O21 microwires with diameters of several hundred nanometers and lengths up to tens of microns were prepared by molten salt synthesis, and characterized by X-ray diffraction, scanning electron microscopy and transmission electron microscopy. The as-synthesized microwires have semiconductor characteristics with band gap Eg of about 3.1 eV, consistent with electrical transport measurement of single microwire, which gives a resistivity of about 0.46 Ω m at room temperature. Microwave dielectric property measurement at 2-18 GHz shows that K2Nb8O21 microwires have a relative low complex permittivity. A weak dielectric relaxation occurs in the 12-16 GHz band due to the free charges polarization on the interfaces between K2Nb8O21 microwires and the PVB matrix.

KW - Electrical transport property

KW - KNbO microwires

KW - Microwave dielectric property

KW - Molten salt synthesis (MSS)

UR - https://www.scopus.com/pages/publications/70349205901

U2 - 10.1016/j.ceramint.2009.04.007

DO - 10.1016/j.ceramint.2009.04.007

M3 - 文章

AN - SCOPUS:70349205901

SN - 0272-8842

VL - 35

SP - 3021

EP - 3025

JO - Ceramics International

JF - Ceramics International

IS - 8

ER -

Electrical and microwave dielectric properties of K₂Nb₈O₂₁ microwires

Abstract

Keywords

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