@inproceedings{36da6871a3e64f6d8befd76055411b4c,
title = "Electrical \& optical properties of Mg-doped narrow band-gap InSbN p-n junction",
abstract = "InSbN p-n junctions are fabricated by direct implantation of N+ and Mg+ into InSb wafers and their electrical and optical properties are characterized. It is found that high quality p-n junctions can be formed and they can absorb photons to form photocurrent. Furthermore, the peak and cut-off wavelengths absorbed can be controlled by monitoring the incorporated nitrogen and the measured peak wavelengths are consistent with the band gaps of the alloys calculated using a 10-band k p model based on In-N bond.",
author = "Chen, \{X. Z.\} and Zhang, \{D. H.\} and Jin, \{Y. J.\} and Sam Zhang",
year = "2010",
doi = "10.1109/PGC.2010.5706124",
language = "英语",
isbn = "9781424498826",
series = "2010 Photonics Global Conference, PGC 2010",
booktitle = "2010 Photonics Global Conference, PGC 2010",
note = "2010 Photonics Global Conference, PGC 2010 ; Conference date: 14-12-2010 Through 16-12-2010",
}