Effects of the electric field on ni-induced crystallization in field-aided lateral crystallization process

Yuhang Wang; Langping Wang; Baoyin Tang; Duck Kyun Choi

doi:10.1109/ICEPT.2005.1564612

Effects of the electric field on ni-induced crystallization in field-aided lateral crystallization process

Yuhang Wang^*
, Langping Wang
, Baoyin Tang
, Duck Kyun Choi

^*Corresponding author for this work

School of Materials Science and Engineering

Harbin Institute of Technology
Hanyang University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

As a crystallization process, the field-aided lateral crystallization (FALC) technique has some outstanding advantages, such as high crystallization rate and low temperature. In this study, an electric filed was directly applied between source and drain areas of H shape patterns using the Mo-W interconnecting layer. The effects of the current density and the electrical field strength on the crystallization behavior were investigated. Such crystallization behaviors are attributed to the coexisting effects of electromigration and potential gradient. In addition, the dependence of the degree of crystallization on the current density was studied and the microstructure crystallized by FALC was compared with the microstructure crystallized by metal induced lateral crystallization (MILC) process.

Original language	English
Title of host publication	2005 6th International Conference on Electronics Packaging Technology
Publisher	IEEE Computer Society
Pages	166-170
Number of pages	5
ISBN (Print)	0780394496, 9780780394490
DOIs	https://doi.org/10.1109/ICEPT.2005.1564612
State	Published - 2005
Event	2005 6th International Conference on Electronics Packaging Technology - Dameisha, Shenzhen, China Duration: 30 Aug 2005 → 2 Sep 2005

Publication series

Name	2005 6th International Conference on Electronics Packaging Technology
Volume	2005

Conference

Conference	2005 6th International Conference on Electronics Packaging Technology
Country/Territory	China
City	Dameisha, Shenzhen
Period	30/08/05 → 2/09/05

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10.1109/ICEPT.2005.1564612

Cite this

Wang, Y., Wang, L., Tang, B., & Choi, D. K. (2005). Effects of the electric field on ni-induced crystallization in field-aided lateral crystallization process. In 2005 6th International Conference on Electronics Packaging Technology (pp. 166-170). Article 1564612 (2005 6th International Conference on Electronics Packaging Technology; Vol. 2005). IEEE Computer Society. https://doi.org/10.1109/ICEPT.2005.1564612

@inproceedings{c79d8d082db9496ba92635566867939a,

title = "Effects of the electric field on ni-induced crystallization in field-aided lateral crystallization process",

abstract = "As a crystallization process, the field-aided lateral crystallization (FALC) technique has some outstanding advantages, such as high crystallization rate and low temperature. In this study, an electric filed was directly applied between source and drain areas of H shape patterns using the Mo-W interconnecting layer. The effects of the current density and the electrical field strength on the crystallization behavior were investigated. Such crystallization behaviors are attributed to the coexisting effects of electromigration and potential gradient. In addition, the dependence of the degree of crystallization on the current density was studied and the microstructure crystallized by FALC was compared with the microstructure crystallized by metal induced lateral crystallization (MILC) process.",

author = "Yuhang Wang and Langping Wang and Baoyin Tang and Choi, \{Duck Kyun\}",

year = "2005",

doi = "10.1109/ICEPT.2005.1564612",

language = "英语",

isbn = "0780394496",

series = "2005 6th International Conference on Electronics Packaging Technology",

publisher = "IEEE Computer Society",

pages = "166--170",

booktitle = "2005 6th International Conference on Electronics Packaging Technology",

address = "美国",

note = "2005 6th International Conference on Electronics Packaging Technology ; Conference date: 30-08-2005 Through 02-09-2005",

}

Wang, Y, Wang, L, Tang, B & Choi, DK 2005, Effects of the electric field on ni-induced crystallization in field-aided lateral crystallization process. in 2005 6th International Conference on Electronics Packaging Technology., 1564612, 2005 6th International Conference on Electronics Packaging Technology, vol. 2005, IEEE Computer Society, pp. 166-170, 2005 6th International Conference on Electronics Packaging Technology, Dameisha, Shenzhen, China, 30/08/05. https://doi.org/10.1109/ICEPT.2005.1564612

Effects of the electric field on ni-induced crystallization in field-aided lateral crystallization process. / Wang, Yuhang; Wang, Langping; Tang, Baoyin et al.
2005 6th International Conference on Electronics Packaging Technology. IEEE Computer Society, 2005. p. 166-170 1564612 (2005 6th International Conference on Electronics Packaging Technology; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Effects of the electric field on ni-induced crystallization in field-aided lateral crystallization process

AU - Wang, Yuhang

AU - Wang, Langping

AU - Tang, Baoyin

AU - Choi, Duck Kyun

PY - 2005

Y1 - 2005

N2 - As a crystallization process, the field-aided lateral crystallization (FALC) technique has some outstanding advantages, such as high crystallization rate and low temperature. In this study, an electric filed was directly applied between source and drain areas of H shape patterns using the Mo-W interconnecting layer. The effects of the current density and the electrical field strength on the crystallization behavior were investigated. Such crystallization behaviors are attributed to the coexisting effects of electromigration and potential gradient. In addition, the dependence of the degree of crystallization on the current density was studied and the microstructure crystallized by FALC was compared with the microstructure crystallized by metal induced lateral crystallization (MILC) process.

AB - As a crystallization process, the field-aided lateral crystallization (FALC) technique has some outstanding advantages, such as high crystallization rate and low temperature. In this study, an electric filed was directly applied between source and drain areas of H shape patterns using the Mo-W interconnecting layer. The effects of the current density and the electrical field strength on the crystallization behavior were investigated. Such crystallization behaviors are attributed to the coexisting effects of electromigration and potential gradient. In addition, the dependence of the degree of crystallization on the current density was studied and the microstructure crystallized by FALC was compared with the microstructure crystallized by metal induced lateral crystallization (MILC) process.

UR - https://www.scopus.com/pages/publications/33846276175

U2 - 10.1109/ICEPT.2005.1564612

DO - 10.1109/ICEPT.2005.1564612

M3 - 会议稿件

AN - SCOPUS:33846276175

SN - 0780394496

SN - 9780780394490

T3 - 2005 6th International Conference on Electronics Packaging Technology

SP - 166

EP - 170

BT - 2005 6th International Conference on Electronics Packaging Technology

PB - IEEE Computer Society

T2 - 2005 6th International Conference on Electronics Packaging Technology

Y2 - 30 August 2005 through 2 September 2005

ER -

Effects of the electric field on ni-induced crystallization in field-aided lateral crystallization process

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