Effects of side reservoirs on the electromigration lifetime of copper interconnects

Hendro Mario; Chee Lip Gan; Yeow Kheng Lim; Juan Boon Tan; Jun Wei; Tongjai Chookajorn; Carl V. Thompson

doi:10.1109/IPFA.2011.5992779

Effects of side reservoirs on the electromigration lifetime of copper interconnects

Hendro Mario^*
, Chee Lip Gan
, Yeow Kheng Lim
, Juan Boon Tan
, Jun Wei
, Tongjai Chookajorn
, Carl V. Thompson

^*Corresponding author for this work

Nanyang Technological University
Global Foundries, Inc.
Agency for Science, Technology and Research, Singapore
Massachusetts Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

A new side reservoir test structure is shown to have improved electromigration reliability over conventional end-of-line reservoir structures. This is believed to be due to the ability of the side reservoir to "trap" migrating pre-existing voids before they reach the cathode end. The ability of the side reservoir to 'trap' pre-existing voids is believed to be associated with local differences in back-stresses and with the differing adhesion strength of Cu atoms with the Ta/Cu and SiN-SiCN/Cu interfaces.

Original language	English
Title of host publication	18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011
DOIs	https://doi.org/10.1109/IPFA.2011.5992779
State	Published - 2011
Externally published	Yes
Event	18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011 - Incheon, Korea, Republic of Duration: 4 Jul 2011 → 7 Jul 2011

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference	18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011
Country/Territory	Korea, Republic of
City	Incheon
Period	4/07/11 → 7/07/11

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10.1109/IPFA.2011.5992779

Cite this

Mario, H., Gan, C. L., Lim, Y. K., Tan, J. B., Wei, J., Chookajorn, T., & Thompson, C. V. (2011). Effects of side reservoirs on the electromigration lifetime of copper interconnects. In 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011 Article 5992779 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). https://doi.org/10.1109/IPFA.2011.5992779

@inproceedings{222b9c523568424890abe9ba2ffabd41,

title = "Effects of side reservoirs on the electromigration lifetime of copper interconnects",

abstract = "A new side reservoir test structure is shown to have improved electromigration reliability over conventional end-of-line reservoir structures. This is believed to be due to the ability of the side reservoir to {"}trap{"} migrating pre-existing voids before they reach the cathode end. The ability of the side reservoir to 'trap' pre-existing voids is believed to be associated with local differences in back-stresses and with the differing adhesion strength of Cu atoms with the Ta/Cu and SiN-SiCN/Cu interfaces.",

author = "Hendro Mario and Gan, \{Chee Lip\} and Lim, \{Yeow Kheng\} and Tan, \{Juan Boon\} and Jun Wei and Tongjai Chookajorn and Thompson, \{Carl V.\}",

year = "2011",

doi = "10.1109/IPFA.2011.5992779",

language = "英语",

isbn = "9781457701597",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

booktitle = "18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011",

note = "18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011 ; Conference date: 04-07-2011 Through 07-07-2011",

}

Mario, H, Gan, CL, Lim, YK, Tan, JB, Wei, J, Chookajorn, T & Thompson, CV 2011, Effects of side reservoirs on the electromigration lifetime of copper interconnects. in 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011., 5992779, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011, Incheon, Korea, Republic of, 4/07/11. https://doi.org/10.1109/IPFA.2011.5992779

Effects of side reservoirs on the electromigration lifetime of copper interconnects. / Mario, Hendro; Gan, Chee Lip; Lim, Yeow Kheng et al.
18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011. 2011. 5992779 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Effects of side reservoirs on the electromigration lifetime of copper interconnects

AU - Mario, Hendro

AU - Gan, Chee Lip

AU - Lim, Yeow Kheng

AU - Tan, Juan Boon

AU - Wei, Jun

AU - Chookajorn, Tongjai

AU - Thompson, Carl V.

PY - 2011

Y1 - 2011

N2 - A new side reservoir test structure is shown to have improved electromigration reliability over conventional end-of-line reservoir structures. This is believed to be due to the ability of the side reservoir to "trap" migrating pre-existing voids before they reach the cathode end. The ability of the side reservoir to 'trap' pre-existing voids is believed to be associated with local differences in back-stresses and with the differing adhesion strength of Cu atoms with the Ta/Cu and SiN-SiCN/Cu interfaces.

AB - A new side reservoir test structure is shown to have improved electromigration reliability over conventional end-of-line reservoir structures. This is believed to be due to the ability of the side reservoir to "trap" migrating pre-existing voids before they reach the cathode end. The ability of the side reservoir to 'trap' pre-existing voids is believed to be associated with local differences in back-stresses and with the differing adhesion strength of Cu atoms with the Ta/Cu and SiN-SiCN/Cu interfaces.

UR - https://www.scopus.com/pages/publications/80052632719

U2 - 10.1109/IPFA.2011.5992779

DO - 10.1109/IPFA.2011.5992779

M3 - 会议稿件

AN - SCOPUS:80052632719

SN - 9781457701597

T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

BT - 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011

T2 - 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011

Y2 - 4 July 2011 through 7 July 2011

ER -

Mario H, Gan CL, Lim YK, Tan JB, Wei J, Chookajorn T et al. Effects of side reservoirs on the electromigration lifetime of copper interconnects. In 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011. 2011. 5992779. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2011.5992779

Effects of side reservoirs on the electromigration lifetime of copper interconnects

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