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Effects of negative bias pulse on characteristics of a-C:H films prepared by plasma-based ion implantation

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Abstract

A series of a-C:H films have been prepared by plasma-based ion implantation (PBII) with acetylene on AISI 321 substrates. The effect of negative bias pulse on the characteristics of these films was investigated. The structures of the films were analyzed by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. The surface hardness was measured by microindentation tests. The results indicated that the characteristics of these films are strongly depended on the negative bias pulse. When the bias pulse ranges from -10kV to -40kV, the films are typical diamond like carbon (DLC) films, while the films deposited at -5kV are polymer films. The peak intensity ratio of the D-band to that of the G-band (ID/IG) of the DLC films changes with the negative bias pulse. The minimum value of ID/IG (1.02) was gotten at -10kV.

Original languageEnglish
Title of host publicationAdvanced Material Science and Technology
PublisherTrans Tech Publications Ltd
Pages1279-1282
Number of pages4
ISBN (Print)9783037850497
DOIs
StatePublished - 2011

Publication series

NameMaterials Science Forum
Volume675 677
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Keywords

  • DLC
  • PBII
  • Raman spectroscopy
  • X-ray photoelectron spectroscopy

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