Abstract
Al-doped ZnO (AZO) transparent conducting films were successfully prepared on glass substrates by radio-frequency (RF) magnetron sputtering. In order to reduce the resistivity of the thin films, the AZO film was hydrogenated with the addition of H 2 in the sputtering atmosphere. The effects of hydrogen ratio in the sputtering ambient and substrate temperature on the effectiveness of hydrogen incorporation in Al-doped ZnO films were investigated. The results show that hydrogen treatment can effectively reduce the resistivity of AZO thin films at low temperatures. At the low substrate temperature of 100°C, the high-quality AZO thin films with the lowest resistivity of 6.0 × 10 -4 Ω · cm can be obtained by adjusting the H 2 ratio in sputtering ambient. The resistivity of AZO thin film with hydrogen incorporation is less than 1/3 compared with that of thin film without hydrogen incorporation under the same condition. Moreover, the improvement of hydrogen treatment on electrical properties is gradually weakened with the substrate temperature increasing.
| Original language | English |
|---|---|
| Pages (from-to) | 83-87 |
| Number of pages | 5 |
| Journal | Fuhe Cailiao Xuebao/Acta Materiae Compositae Sinica |
| Volume | 29 |
| Issue number | 5 |
| State | Published - Oct 2012 |
| Externally published | Yes |
Keywords
- AZO thin films
- Hydrogen treatment
- RF magnetron sputtering
- Resistivity
- Substrate temperature
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