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Effects of charge-density-wave phase transition on electrical transport and Raman spectra in 2 H -tantalum disulfide

  • Kai Zhang*
  • , Zi Yu Cao
  • , Xiao Jia Chen
  • *Corresponding author for this work
  • CAS - Institute of Solid State Physics
  • University of Science and Technology of China
  • Center for High Pressure Science & Technology Advanced Research

Research output: Contribution to journalArticlepeer-review

Abstract

Measurements of electrical transport and Raman spectroscopy are performed on 2H-TaS2 to study the formation and the character of the charge density wave. The entry of the charge-density-wave state below the lock-in temperature is detected by the sudden change of the resistivity slope with temperature, the sharp rise of the magneto-resistivity, and the significant change in the Hall coefficient. Meanwhile, the frequency of the two-phonon mode decreases with decreasing temperature. When approaching the lock-in temperature, the formation of the charge density wave is also evidenced by the disappearance of the two-phonon mode. In the charge density wave state, the newly born charge-density-wave modes in the E2g- and A1g-symmetries exhibit a blue-shift with decreasing temperature. These results suggest that the combined techniques of electrical transport measurement and Raman spectroscopy are powerful in studying the charge-density-wave order in materials with strong electron-phonon coupling.

Original languageEnglish
Article number141901
JournalApplied Physics Letters
Volume114
Issue number14
DOIs
StatePublished - 8 Apr 2019
Externally publishedYes

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