Effects of boron addition on the high temperature oxidation resistance of dense sSiBCN monoliths at 1500 °C

Daxin Li; Zhihua Yang; Dechang Jia; Xiaoming Duan; Shengjin Wang; Qishuai Zhu; Yang Miao; Jiancun Rao; Yu Zhou

doi:10.1016/j.corsci.2017.05.014

Effects of boron addition on the high temperature oxidation resistance of dense sSiBCN monoliths at 1500 °C

Daxin Li
, Zhihua Yang^*
, Dechang Jia
, Xiaoming Duan
, Shengjin Wang
, Qishuai Zhu
, Yang Miao
, Jiancun Rao
, Yu Zhou

^*Corresponding author for this work

School of Materials Science and Engineering

Harbin Institute of Technology
Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

The high-temperature oxidation behavior of various boron addition SiBCN monoliths has been explored. Boron addition promotes the formation of new B_xC phase and growth of SiC gains. At the initial stage of oxidation, surface B_xC and BN(C) are prior to SiC generating B₂O₃. As time progresses, SiC oxidizes to SiO₂ further reacted with B₂O₃ forming stable SiO₂-B₂O₃ binary melt or borosilicate. Boron-enhanced SiC oxidation occurs immediately with the rapid consumption of BN(C), B_xC and loss of B₂O₃ from borosilicate decomposition, thereby promoting oxidation rate. Substantial SiC and BN(C) in amorphous SiO₂ for transition layer is the main structure feature.

Original language	English
Pages (from-to)	10-25
Number of pages	16
Journal	Corrosion Science
Volume	126
DOIs	https://doi.org/10.1016/j.corsci.2017.05.014
State	Published - Sep 2017

Keywords

A. Ceramic matrix composites
B. SEM
B. STEM
C. High temperature corrosion
C. Oxidation

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10.1016/j.corsci.2017.05.014

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@article{906836ee555544769eeca6aacbce1ae8,

title = "Effects of boron addition on the high temperature oxidation resistance of dense sSiBCN monoliths at 1500 °C",

abstract = "The high-temperature oxidation behavior of various boron addition SiBCN monoliths has been explored. Boron addition promotes the formation of new BxC phase and growth of SiC gains. At the initial stage of oxidation, surface BxC and BN(C) are prior to SiC generating B2O3. As time progresses, SiC oxidizes to SiO2 further reacted with B2O3 forming stable SiO2-B2O3 binary melt or borosilicate. Boron-enhanced SiC oxidation occurs immediately with the rapid consumption of BN(C), BxC and loss of B2O3 from borosilicate decomposition, thereby promoting oxidation rate. Substantial SiC and BN(C) in amorphous SiO2 for transition layer is the main structure feature.",

keywords = "A. Ceramic matrix composites, B. SEM, B. STEM, C. High temperature corrosion, C. Oxidation",

author = "Daxin Li and Zhihua Yang and Dechang Jia and Xiaoming Duan and Shengjin Wang and Qishuai Zhu and Yang Miao and Jiancun Rao and Yu Zhou",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier Ltd",

year = "2017",

month = sep,

doi = "10.1016/j.corsci.2017.05.014",

language = "英语",

volume = "126",

pages = "10--25",

journal = "Corrosion Science",

issn = "0010-938X",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - Effects of boron addition on the high temperature oxidation resistance of dense sSiBCN monoliths at 1500 °C

AU - Li, Daxin

AU - Yang, Zhihua

AU - Jia, Dechang

AU - Duan, Xiaoming

AU - Wang, Shengjin

AU - Zhu, Qishuai

AU - Miao, Yang

AU - Rao, Jiancun

AU - Zhou, Yu

PY - 2017/9

Y1 - 2017/9

N2 - The high-temperature oxidation behavior of various boron addition SiBCN monoliths has been explored. Boron addition promotes the formation of new BxC phase and growth of SiC gains. At the initial stage of oxidation, surface BxC and BN(C) are prior to SiC generating B2O3. As time progresses, SiC oxidizes to SiO2 further reacted with B2O3 forming stable SiO2-B2O3 binary melt or borosilicate. Boron-enhanced SiC oxidation occurs immediately with the rapid consumption of BN(C), BxC and loss of B2O3 from borosilicate decomposition, thereby promoting oxidation rate. Substantial SiC and BN(C) in amorphous SiO2 for transition layer is the main structure feature.

AB - The high-temperature oxidation behavior of various boron addition SiBCN monoliths has been explored. Boron addition promotes the formation of new BxC phase and growth of SiC gains. At the initial stage of oxidation, surface BxC and BN(C) are prior to SiC generating B2O3. As time progresses, SiC oxidizes to SiO2 further reacted with B2O3 forming stable SiO2-B2O3 binary melt or borosilicate. Boron-enhanced SiC oxidation occurs immediately with the rapid consumption of BN(C), BxC and loss of B2O3 from borosilicate decomposition, thereby promoting oxidation rate. Substantial SiC and BN(C) in amorphous SiO2 for transition layer is the main structure feature.

KW - A. Ceramic matrix composites

KW - B. SEM

KW - B. STEM

KW - C. High temperature corrosion

KW - C. Oxidation

UR - https://www.scopus.com/pages/publications/85025452982

U2 - 10.1016/j.corsci.2017.05.014

DO - 10.1016/j.corsci.2017.05.014

M3 - 文章

AN - SCOPUS:85025452982

SN - 0010-938X

VL - 126

SP - 10

EP - 25

JO - Corrosion Science

JF - Corrosion Science

ER -

Effects of boron addition on the high temperature oxidation resistance of dense sSiBCN monoliths at 1500 °C

Abstract

Keywords

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