Effects of bias voltage on the corrosion resistance of titanium nitride thin films fabricated by dynamic plasma immersion ion implantation-deposition

Xiubo Tian; Ricky K.Y. Fu; Paul K. Chu

doi:10.1116/1.1427892

Effects of bias voltage on the corrosion resistance of titanium nitride thin films fabricated by dynamic plasma immersion ion implantation-deposition

Xiubo Tian
, Ricky K.Y. Fu
, Paul K. Chu^*

^*Corresponding author for this work

City University of Hong Kong

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

A systematic investigation on the effects of the bias voltage on the corrosion properties and interfacial structure of TiN films was carried out. It was shown that the bias voltage has a critical influence on the interfacial structure and corrosion resistance of titanium nitride layers fabricated using dynamic PIII-D. It was found that the existence of microdefects in the layer does not change the pitting potential. Auger results show that high-energy ion bombardment in the dynamic PIII-D process alters the chemical structure of the interface. Based on SEM results, the sample treated at the lowest voltage, 8 kV, possesses the best corrosion resistance.

Original language	English
Pages (from-to)	160-164
Number of pages	5
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	20
Issue number	1
DOIs	https://doi.org/10.1116/1.1427892
State	Published - Jan 2002
Externally published	Yes

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title = "Effects of bias voltage on the corrosion resistance of titanium nitride thin films fabricated by dynamic plasma immersion ion implantation-deposition",

abstract = "A systematic investigation on the effects of the bias voltage on the corrosion properties and interfacial structure of TiN films was carried out. It was shown that the bias voltage has a critical influence on the interfacial structure and corrosion resistance of titanium nitride layers fabricated using dynamic PIII-D. It was found that the existence of microdefects in the layer does not change the pitting potential. Auger results show that high-energy ion bombardment in the dynamic PIII-D process alters the chemical structure of the interface. Based on SEM results, the sample treated at the lowest voltage, 8 kV, possesses the best corrosion resistance.",

author = "Xiubo Tian and Fu, \{Ricky K.Y.\} and Chu, \{Paul K.\}",

year = "2002",

month = jan,

doi = "10.1116/1.1427892",

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volume = "20",

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issn = "0734-2101",

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Effects of bias voltage on the corrosion resistance of titanium nitride thin films fabricated by dynamic plasma immersion ion implantation-deposition. / Tian, Xiubo; Fu, Ricky K.Y.; Chu, Paul K.
In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 20, No. 1, 01.2002, p. 160-164.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Effects of bias voltage on the corrosion resistance of titanium nitride thin films fabricated by dynamic plasma immersion ion implantation-deposition

AU - Tian, Xiubo

AU - Fu, Ricky K.Y.

AU - Chu, Paul K.

PY - 2002/1

Y1 - 2002/1

N2 - A systematic investigation on the effects of the bias voltage on the corrosion properties and interfacial structure of TiN films was carried out. It was shown that the bias voltage has a critical influence on the interfacial structure and corrosion resistance of titanium nitride layers fabricated using dynamic PIII-D. It was found that the existence of microdefects in the layer does not change the pitting potential. Auger results show that high-energy ion bombardment in the dynamic PIII-D process alters the chemical structure of the interface. Based on SEM results, the sample treated at the lowest voltage, 8 kV, possesses the best corrosion resistance.

AB - A systematic investigation on the effects of the bias voltage on the corrosion properties and interfacial structure of TiN films was carried out. It was shown that the bias voltage has a critical influence on the interfacial structure and corrosion resistance of titanium nitride layers fabricated using dynamic PIII-D. It was found that the existence of microdefects in the layer does not change the pitting potential. Auger results show that high-energy ion bombardment in the dynamic PIII-D process alters the chemical structure of the interface. Based on SEM results, the sample treated at the lowest voltage, 8 kV, possesses the best corrosion resistance.

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U2 - 10.1116/1.1427892

DO - 10.1116/1.1427892

M3 - 文章

AN - SCOPUS:0036162801

SN - 0734-2101

VL - 20

SP - 160

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JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 1

ER -

Effects of bias voltage on the corrosion resistance of titanium nitride thin films fabricated by dynamic plasma immersion ion implantation-deposition

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