TY - GEN
T1 - Effective damping constant and perpendicular anisotropy of GdFeCo / TbFe exchange coupled bilayer
AU - Higashide, T.
AU - Dai, B.
AU - Oshima, D.
AU - Kato, T.
AU - Iwata, S.
AU - Tsunashima, S.
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/7/14
Y1 - 2015/7/14
N2 - Spin transfer torque (STT) switching is considered as a promising technology to realize Gbit class magnetic random access memories (MRAMs). However, to develop high density MRAM with densities of several Gbit and beyond, there still remains a challenge to reduce critical current density for the STT switching while keeping large thermal stability of the memory layer. One of the solutions for this challenge is thermally assisted MRAM in which the memory layer is heated during the writing. We have studied amorphous GdFeCo and GdFeCo / TbFe exchange coupled bilayer as memory layers of the thermally assisted MRAM cell, and reported the STT switching of these memory layer [1-3]. In this study, we report Gilbert damping constant a and perpendicular anisotropy of GdFeCo / TbFe exchange coupled bilayer, and compare these data with critical current densities Jc. of the STT switching of GdFeCo / TbFe memory layers.
AB - Spin transfer torque (STT) switching is considered as a promising technology to realize Gbit class magnetic random access memories (MRAMs). However, to develop high density MRAM with densities of several Gbit and beyond, there still remains a challenge to reduce critical current density for the STT switching while keeping large thermal stability of the memory layer. One of the solutions for this challenge is thermally assisted MRAM in which the memory layer is heated during the writing. We have studied amorphous GdFeCo and GdFeCo / TbFe exchange coupled bilayer as memory layers of the thermally assisted MRAM cell, and reported the STT switching of these memory layer [1-3]. In this study, we report Gilbert damping constant a and perpendicular anisotropy of GdFeCo / TbFe exchange coupled bilayer, and compare these data with critical current densities Jc. of the STT switching of GdFeCo / TbFe memory layers.
UR - https://www.scopus.com/pages/publications/84942465739
U2 - 10.1109/INTMAG.2015.7157687
DO - 10.1109/INTMAG.2015.7157687
M3 - 会议稿件
AN - SCOPUS:84942465739
T3 - 2015 IEEE International Magnetics Conference, INTERMAG 2015
BT - 2015 IEEE International Magnetics Conference, INTERMAG 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2015 IEEE International Magnetics Conference, INTERMAG 2015
Y2 - 11 May 2015 through 15 May 2015
ER -