Effect of sintering process on dielectric properties of B₂O₃-doped graded ceramics

Effects of sintering temperature and heating rate on densification, grain size and dielectric properties of B₂O₃-doped Ba_1-xSr_xTiO₃(x = 0-0.4, in step of 0.02) graded ceramics were investigated. With the increase of sintering temperature, B₂O₃ volatilization and densification improvement resulted in Curie peak elevated and sharpened. With the increase of dopant content, grains grew up uniformly, and dielectric constant and loss increased. While dopant volatilization, densification process and grain growth were fulfilled synchronously with appropriate heating rate, which conduces to the dielectric improvement and dielectric loss reduction for the graded ceramics. In addition, B₂O₃ doping lowered at least 150°C of the sintering temperature, and the dielectric loss was reduced obviously; Curie peak was broadened and flattened remarkably and the temperature coefficient of permittivity was decreased greatly, which means the accuracy and stability of components with such material can be improved.