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Effect of R.F. power on structures and properties of amorphous fluorinated carbon films prepared by PSII

  • Harbin Institute of Technology

Research output: Contribution to journalConference articlepeer-review

Abstract

Fluorinated amorphous carbon films (a-C:H:F) were deposited by plasma source ion implantation (PSII) with precursor gas of CH2FCF 3 + C2H2 + H2 with various radio frequency (r.f.) power. Structures and properties evolution varied with r.f. power was discussed in detail. X-ray photoelectron spectroscopy (XPS), Raman spectrum, X-Ray reflection(XRR), atomic force microscopy (AFM) were used to analyze composition, chemical state, sp2 cluster structure, density and surface morphology of prepared films. Nano-indentation test was used to get hardness and modulus. The results show that with the increase of r.f. power, the size and amount of sp2 cluster increase, so does the surface roughness; however, the density and the hardness of films decrease.

Original languageEnglish
Pages (from-to)1829-1832
Number of pages4
JournalKey Engineering Materials
Volume353-358
Issue numberPART 3
DOIs
StatePublished - 2007
Externally publishedYes
EventAsian Pacific Conference for Fracture and Strength (APCFS'06) - Sanya, Hainan Island, China
Duration: 22 Nov 200625 Nov 2006

Keywords

  • A-C:F films
  • PSII
  • Property
  • Structure

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