Effect of post-thermal annealing on properties of ZnO thin film grown on c-Al2O3 by metal-organic chemical vapor deposition

Xiaotian Yang; Guotong Du; Xinqiang Wang; Jinzhong Wang; Boyang Liu; Yuantao Zhang; Dan Liu; Dali Liu; H. C. Ong; Shuren Yang

doi:10.1016/S0022-0248(03)00898-4

Effect of post-thermal annealing on properties of ZnO thin film grown on c-Al₂O₃ by metal-organic chemical vapor deposition

Xiaotian Yang
, Guotong Du^*
, Xinqiang Wang
, Jinzhong Wang
, Boyang Liu
, Yuantao Zhang
, Dan Liu
, Dali Liu
, H. C. Ong
, Shuren Yang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

80 Scopus citations

Abstract

In this paper, high-quality ZnO film was grown by metal-organic chemical vapor deposition. Post-thermal annealing was performed on ZnO film in vacuum and oxygen condition. We could find only the X-ray diffraction pattern of (0 0 2) ZnO film indicating strong c-oriented growth. The quality of ZnO film was improved by thermal annealing in vacuum as confirmed by XRD and photoluminescence measurement. Raman scattering on as-grown ZnO film indicated that the quality of ZnO film was improved by thermal annealing in oxygen. The intensity of deep-level emission increased much after annealing in oxygen, while it nearly did not change after annealing in vacuum. We believed that the deep-level emission was related to zinc vacancy. The resistivity increased from 2.4 to 1100 Ωcm after thermal annealing in oxygen.

Original language	English
Pages (from-to)	275-278
Number of pages	4
Journal	Journal of Crystal Growth
Volume	252
Issue number	1-3
DOIs	https://doi.org/10.1016/S0022-0248(03)00898-4
State	Published - May 2003
Externally published	Yes

Keywords

A3. Metalorganic chemical vapor deposition
B1. Oxides
B2. Semiconducting II-VI materials

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10.1016/S0022-0248(03)00898-4

Cite this

@article{354f2f12610249048740f2921d0d7a65,

title = "Effect of post-thermal annealing on properties of ZnO thin film grown on c-Al2O3 by metal-organic chemical vapor deposition",

abstract = "In this paper, high-quality ZnO film was grown by metal-organic chemical vapor deposition. Post-thermal annealing was performed on ZnO film in vacuum and oxygen condition. We could find only the X-ray diffraction pattern of (0 0 2) ZnO film indicating strong c-oriented growth. The quality of ZnO film was improved by thermal annealing in vacuum as confirmed by XRD and photoluminescence measurement. Raman scattering on as-grown ZnO film indicated that the quality of ZnO film was improved by thermal annealing in oxygen. The intensity of deep-level emission increased much after annealing in oxygen, while it nearly did not change after annealing in vacuum. We believed that the deep-level emission was related to zinc vacancy. The resistivity increased from 2.4 to 1100 Ωcm after thermal annealing in oxygen.",

keywords = "A3. Metalorganic chemical vapor deposition, B1. Oxides, B2. Semiconducting II-VI materials",

author = "Xiaotian Yang and Guotong Du and Xinqiang Wang and Jinzhong Wang and Boyang Liu and Yuantao Zhang and Dan Liu and Dali Liu and Ong, \{H. C.\} and Shuren Yang",

year = "2003",

month = may,

doi = "10.1016/S0022-0248(03)00898-4",

language = "英语",

volume = "252",

pages = "275--278",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1-3",

}

TY - JOUR

T1 - Effect of post-thermal annealing on properties of ZnO thin film grown on c-Al2O3 by metal-organic chemical vapor deposition

AU - Yang, Xiaotian

AU - Du, Guotong

AU - Wang, Xinqiang

AU - Wang, Jinzhong

AU - Liu, Boyang

AU - Zhang, Yuantao

AU - Liu, Dan

AU - Liu, Dali

AU - Ong, H. C.

AU - Yang, Shuren

PY - 2003/5

Y1 - 2003/5

N2 - In this paper, high-quality ZnO film was grown by metal-organic chemical vapor deposition. Post-thermal annealing was performed on ZnO film in vacuum and oxygen condition. We could find only the X-ray diffraction pattern of (0 0 2) ZnO film indicating strong c-oriented growth. The quality of ZnO film was improved by thermal annealing in vacuum as confirmed by XRD and photoluminescence measurement. Raman scattering on as-grown ZnO film indicated that the quality of ZnO film was improved by thermal annealing in oxygen. The intensity of deep-level emission increased much after annealing in oxygen, while it nearly did not change after annealing in vacuum. We believed that the deep-level emission was related to zinc vacancy. The resistivity increased from 2.4 to 1100 Ωcm after thermal annealing in oxygen.

AB - In this paper, high-quality ZnO film was grown by metal-organic chemical vapor deposition. Post-thermal annealing was performed on ZnO film in vacuum and oxygen condition. We could find only the X-ray diffraction pattern of (0 0 2) ZnO film indicating strong c-oriented growth. The quality of ZnO film was improved by thermal annealing in vacuum as confirmed by XRD and photoluminescence measurement. Raman scattering on as-grown ZnO film indicated that the quality of ZnO film was improved by thermal annealing in oxygen. The intensity of deep-level emission increased much after annealing in oxygen, while it nearly did not change after annealing in vacuum. We believed that the deep-level emission was related to zinc vacancy. The resistivity increased from 2.4 to 1100 Ωcm after thermal annealing in oxygen.

KW - A3. Metalorganic chemical vapor deposition

KW - B1. Oxides

KW - B2. Semiconducting II-VI materials

UR - https://www.scopus.com/pages/publications/0037401387

U2 - 10.1016/S0022-0248(03)00898-4

DO - 10.1016/S0022-0248(03)00898-4

M3 - 文章

AN - SCOPUS:0037401387

SN - 0022-0248

VL - 252

SP - 275

EP - 278

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-3

ER -

Effect of post-thermal annealing on properties of ZnO thin film grown on c-Al₂O₃ by metal-organic chemical vapor deposition

Abstract

Keywords

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