Effect of post-annealing treatment in oxygen on dielectric properties of K0.5Na0.5NbO3 thin films prepared by chemical solution deposition

N. Li; W. L. Li; S. Q. Zhang; W. D. Fei

doi:10.1016/j.tsf.2011.01.130

Effect of post-annealing treatment in oxygen on dielectric properties of K_0.5Na_0.5NbO₃ thin films prepared by chemical solution deposition

N. Li
, W. L. Li
, S. Q. Zhang
, W. D. Fei

School of Materials Science and Engineering

Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

K_0.5Na_0.5NbO₃ thin films were prepared on Pt/Ti/SiO₂/Si substrates by chemical solution deposition method with different annealing temperatures of 550 °C, 600 °C, 700 °C. The post-annealing treatment was introduced at 550 °C for 3 min in oxygen ambient. It is found that the films were composed of pure provskite phase, and the post-annealing treatment promoted the crystallization and improved the quality of the films, which resulted in the enhancement of the dielectric property of the films. The effect of the post-annealing on the dielectric properties of the films was also discussed.

Original language	English
Pages (from-to)	5070-5073
Number of pages	4
Journal	Thin Solid Films
Volume	519
Issue number	15
DOIs	https://doi.org/10.1016/j.tsf.2011.01.130
State	Published - 31 May 2011

Keywords

Dielectric properties
KNaNbO
Post-annealing
Thin films

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10.1016/j.tsf.2011.01.130

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title = "Effect of post-annealing treatment in oxygen on dielectric properties of K0.5Na0.5NbO3 thin films prepared by chemical solution deposition",

abstract = "K0.5Na0.5NbO3 thin films were prepared on Pt/Ti/SiO2/Si substrates by chemical solution deposition method with different annealing temperatures of 550 °C, 600 °C, 700 °C. The post-annealing treatment was introduced at 550 °C for 3 min in oxygen ambient. It is found that the films were composed of pure provskite phase, and the post-annealing treatment promoted the crystallization and improved the quality of the films, which resulted in the enhancement of the dielectric property of the films. The effect of the post-annealing on the dielectric properties of the films was also discussed.",

keywords = "Dielectric properties, KNaNbO, Post-annealing, Thin films",

author = "N. Li and Li, \{W. L.\} and Zhang, \{S. Q.\} and Fei, \{W. D.\}",

year = "2011",

month = may,

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doi = "10.1016/j.tsf.2011.01.130",

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T1 - Effect of post-annealing treatment in oxygen on dielectric properties of K0.5Na0.5NbO3 thin films prepared by chemical solution deposition

AU - Li, N.

AU - Li, W. L.

AU - Zhang, S. Q.

AU - Fei, W. D.

PY - 2011/5/31

Y1 - 2011/5/31

N2 - K0.5Na0.5NbO3 thin films were prepared on Pt/Ti/SiO2/Si substrates by chemical solution deposition method with different annealing temperatures of 550 °C, 600 °C, 700 °C. The post-annealing treatment was introduced at 550 °C for 3 min in oxygen ambient. It is found that the films were composed of pure provskite phase, and the post-annealing treatment promoted the crystallization and improved the quality of the films, which resulted in the enhancement of the dielectric property of the films. The effect of the post-annealing on the dielectric properties of the films was also discussed.

AB - K0.5Na0.5NbO3 thin films were prepared on Pt/Ti/SiO2/Si substrates by chemical solution deposition method with different annealing temperatures of 550 °C, 600 °C, 700 °C. The post-annealing treatment was introduced at 550 °C for 3 min in oxygen ambient. It is found that the films were composed of pure provskite phase, and the post-annealing treatment promoted the crystallization and improved the quality of the films, which resulted in the enhancement of the dielectric property of the films. The effect of the post-annealing on the dielectric properties of the films was also discussed.

KW - Dielectric properties

KW - KNaNbO

KW - Post-annealing

KW - Thin films

UR - https://www.scopus.com/pages/publications/79957644180

U2 - 10.1016/j.tsf.2011.01.130

DO - 10.1016/j.tsf.2011.01.130

M3 - 文章

AN - SCOPUS:79957644180

SN - 0040-6090

VL - 519

SP - 5070

EP - 5073

JO - Thin Solid Films

JF - Thin Solid Films

IS - 15

ER -

Effect of post-annealing treatment in oxygen on dielectric properties of K_0.5Na_0.5NbO₃ thin films prepared by chemical solution deposition

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Keywords

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