Effect of oxygen flow rate on microstructure properties of SiO2 thin films prepared by ion beam sputtering

Lishuan Wang; Yugang Jiang; Chenghui Jiang; Huasong Liu; Yiqin Ji; Feng Zhang; Rongwei Fan; Deying Chen

doi:10.1016/j.jnoncrysol.2017.12.046

Effect of oxygen flow rate on microstructure properties of SiO₂ thin films prepared by ion beam sputtering

Lishuan Wang
, Yugang Jiang
, Chenghui Jiang
, Huasong Liu^*
, Yiqin Ji
, Feng Zhang
, Rongwei Fan
, Deying Chen

^*Corresponding author for this work

School of Astronautics

Harbin Institute of Technology
HIWING Technology Academy of CASIC

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

Optical constants and micro-structure characteristics of SiO₂ films deposited by ion beam sputtering were studied. The samples were prepared on substrates of silicon and silica with different oxygen flow rates ranged from 0 sccm to 40 sccm with a step of 10 sccm. Refractive index of the samples were obtained by spectra inversion technique. It's suggested that the value of refractive index presents first decrease and then increase as the oxygen flow rate larger, and the turning point is about 30 sccm both at 0.633 μm and 10.6 μm. And the SiO₂ thin films were confirmed all amorphous structure by the XRD measurement. The proportion of hydroxyl in SiO₂ thin film were determined by XPS, which is beneficial to analyze the film defects. Also the Si-O-Si angle and vibration frequency in TO mode and LO mode were researched by FTIR spectra.

Original language	English
Pages (from-to)	203-207
Number of pages	5
Journal	Journal of Non-Crystalline Solids
Volume	482
DOIs	https://doi.org/10.1016/j.jnoncrysol.2017.12.046
State	Published - 15 Feb 2018

Keywords

Ion beam sputtering
Micro-structure
Oxygen flow rate
Refractive index
SiO thin films

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10.1016/j.jnoncrysol.2017.12.046

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title = "Effect of oxygen flow rate on microstructure properties of SiO2 thin films prepared by ion beam sputtering",

abstract = "Optical constants and micro-structure characteristics of SiO2 films deposited by ion beam sputtering were studied. The samples were prepared on substrates of silicon and silica with different oxygen flow rates ranged from 0 sccm to 40 sccm with a step of 10 sccm. Refractive index of the samples were obtained by spectra inversion technique. It's suggested that the value of refractive index presents first decrease and then increase as the oxygen flow rate larger, and the turning point is about 30 sccm both at 0.633 μm and 10.6 μm. And the SiO2 thin films were confirmed all amorphous structure by the XRD measurement. The proportion of hydroxyl in SiO2 thin film were determined by XPS, which is beneficial to analyze the film defects. Also the Si-O-Si angle and vibration frequency in TO mode and LO mode were researched by FTIR spectra.",

keywords = "Ion beam sputtering, Micro-structure, Oxygen flow rate, Refractive index, SiO thin films",

author = "Lishuan Wang and Yugang Jiang and Chenghui Jiang and Huasong Liu and Yiqin Ji and Feng Zhang and Rongwei Fan and Deying Chen",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier B.V.",

year = "2018",

month = feb,

day = "15",

doi = "10.1016/j.jnoncrysol.2017.12.046",

language = "英语",

volume = "482",

pages = "203--207",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Effect of oxygen flow rate on microstructure properties of SiO2 thin films prepared by ion beam sputtering

AU - Wang, Lishuan

AU - Jiang, Yugang

AU - Jiang, Chenghui

AU - Liu, Huasong

AU - Ji, Yiqin

AU - Zhang, Feng

AU - Fan, Rongwei

AU - Chen, Deying

PY - 2018/2/15

Y1 - 2018/2/15

N2 - Optical constants and micro-structure characteristics of SiO2 films deposited by ion beam sputtering were studied. The samples were prepared on substrates of silicon and silica with different oxygen flow rates ranged from 0 sccm to 40 sccm with a step of 10 sccm. Refractive index of the samples were obtained by spectra inversion technique. It's suggested that the value of refractive index presents first decrease and then increase as the oxygen flow rate larger, and the turning point is about 30 sccm both at 0.633 μm and 10.6 μm. And the SiO2 thin films were confirmed all amorphous structure by the XRD measurement. The proportion of hydroxyl in SiO2 thin film were determined by XPS, which is beneficial to analyze the film defects. Also the Si-O-Si angle and vibration frequency in TO mode and LO mode were researched by FTIR spectra.

AB - Optical constants and micro-structure characteristics of SiO2 films deposited by ion beam sputtering were studied. The samples were prepared on substrates of silicon and silica with different oxygen flow rates ranged from 0 sccm to 40 sccm with a step of 10 sccm. Refractive index of the samples were obtained by spectra inversion technique. It's suggested that the value of refractive index presents first decrease and then increase as the oxygen flow rate larger, and the turning point is about 30 sccm both at 0.633 μm and 10.6 μm. And the SiO2 thin films were confirmed all amorphous structure by the XRD measurement. The proportion of hydroxyl in SiO2 thin film were determined by XPS, which is beneficial to analyze the film defects. Also the Si-O-Si angle and vibration frequency in TO mode and LO mode were researched by FTIR spectra.

KW - Ion beam sputtering

KW - Micro-structure

KW - Oxygen flow rate

KW - Refractive index

KW - SiO thin films

UR - https://www.scopus.com/pages/publications/85040040226

U2 - 10.1016/j.jnoncrysol.2017.12.046

DO - 10.1016/j.jnoncrysol.2017.12.046

M3 - 文章

AN - SCOPUS:85040040226

SN - 0022-3093

VL - 482

SP - 203

EP - 207

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

ER -

Effect of oxygen flow rate on microstructure properties of SiO₂ thin films prepared by ion beam sputtering

Abstract

Keywords

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