Effect of LaNiO3 electrode on crystallization of BaTiO 3 thin films for capacitors prepared by solgel technique

Bin Li; Chunqing Wang; Weiwei Wu; Wei Zhang; Ying Zhong

doi:10.1109/ICEPT.2011.6066852

Effect of LaNiO₃ electrode on crystallization of BaTiO ₃ thin films for capacitors prepared by solgel technique

Bin Li^*
, Chunqing Wang
, Weiwei Wu
, Wei Zhang
, Ying Zhong

^*Corresponding author for this work

School of Integrated Circuits

Harbin Institute of Technology
School of Materials Science and Engineering, Harbin Institute of Technology Weihai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The conductive LaNi0₃ (LNO) and ferroelectric BaTi0₃ (BTO) thin films had been prepared by sol-gel method. The preparation process of LNO films had been optimized by studying on the effects of annealing temperature and film thickness on their properties and structures. The optimal annealing temperature of LNO films was 700 °C. With the increment of film thickness, the surface resistivity of LNO films reduced. It was found that the LNO films, could induce the crystal orientations of BTO thin films, would greatly expand the application of ferroelectric films in the field of capacitors.

Original language	English
Title of host publication	ICEPT-HDP 2011 Proceedings - 2011 International Conference on Electronic Packaging Technology and High Density Packaging
Pages	357-360
Number of pages	4
DOIs	https://doi.org/10.1109/ICEPT.2011.6066852
State	Published - 2011
Event	2011 12th International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2011 - Shanghai, China Duration: 8 Aug 2011 → 11 Aug 2011

Publication series

Name	ICEPT-HDP 2011 Proceedings - 2011 International Conference on Electronic Packaging Technology and High Density Packaging

Conference

Conference	2011 12th International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2011
Country/Territory	China
City	Shanghai
Period	8/08/11 → 11/08/11

Access to Document

10.1109/ICEPT.2011.6066852

Cite this

Li, B., Wang, C., Wu, W., Zhang, W., & Zhong, Y. (2011). Effect of LaNiO₃ electrode on crystallization of BaTiO ₃ thin films for capacitors prepared by solgel technique. In ICEPT-HDP 2011 Proceedings - 2011 International Conference on Electronic Packaging Technology and High Density Packaging (pp. 357-360). Article 6066852 (ICEPT-HDP 2011 Proceedings - 2011 International Conference on Electronic Packaging Technology and High Density Packaging). https://doi.org/10.1109/ICEPT.2011.6066852

Li, Bin ; Wang, Chunqing ; Wu, Weiwei et al. / Effect of LaNiO₃ electrode on crystallization of BaTiO ₃ thin films for capacitors prepared by solgel technique. ICEPT-HDP 2011 Proceedings - 2011 International Conference on Electronic Packaging Technology and High Density Packaging. 2011. pp. 357-360 (ICEPT-HDP 2011 Proceedings - 2011 International Conference on Electronic Packaging Technology and High Density Packaging).

@inproceedings{e02ff8900a81454184e656574491fe6d,

title = "Effect of LaNiO3 electrode on crystallization of BaTiO 3 thin films for capacitors prepared by solgel technique",

abstract = "The conductive LaNi03 (LNO) and ferroelectric BaTi03 (BTO) thin films had been prepared by sol-gel method. The preparation process of LNO films had been optimized by studying on the effects of annealing temperature and film thickness on their properties and structures. The optimal annealing temperature of LNO films was 700 °C. With the increment of film thickness, the surface resistivity of LNO films reduced. It was found that the LNO films, could induce the crystal orientations of BTO thin films, would greatly expand the application of ferroelectric films in the field of capacitors.",

author = "Bin Li and Chunqing Wang and Weiwei Wu and Wei Zhang and Ying Zhong",

year = "2011",

doi = "10.1109/ICEPT.2011.6066852",

language = "英语",

isbn = "9781457717680",

series = "ICEPT-HDP 2011 Proceedings - 2011 International Conference on Electronic Packaging Technology and High Density Packaging",

pages = "357--360",

booktitle = "ICEPT-HDP 2011 Proceedings - 2011 International Conference on Electronic Packaging Technology and High Density Packaging",

note = "2011 12th International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2011 ; Conference date: 08-08-2011 Through 11-08-2011",

}

Li, B, Wang, C, Wu, W, Zhang, W & Zhong, Y 2011, Effect of LaNiO₃ electrode on crystallization of BaTiO ₃ thin films for capacitors prepared by solgel technique. in ICEPT-HDP 2011 Proceedings - 2011 International Conference on Electronic Packaging Technology and High Density Packaging., 6066852, ICEPT-HDP 2011 Proceedings - 2011 International Conference on Electronic Packaging Technology and High Density Packaging, pp. 357-360, 2011 12th International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2011, Shanghai, China, 8/08/11. https://doi.org/10.1109/ICEPT.2011.6066852

Effect of LaNiO₃ electrode on crystallization of BaTiO ₃ thin films for capacitors prepared by solgel technique. / Li, Bin; Wang, Chunqing; Wu, Weiwei et al.
ICEPT-HDP 2011 Proceedings - 2011 International Conference on Electronic Packaging Technology and High Density Packaging. 2011. p. 357-360 6066852 (ICEPT-HDP 2011 Proceedings - 2011 International Conference on Electronic Packaging Technology and High Density Packaging).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - The conductive LaNi03 (LNO) and ferroelectric BaTi03 (BTO) thin films had been prepared by sol-gel method. The preparation process of LNO films had been optimized by studying on the effects of annealing temperature and film thickness on their properties and structures. The optimal annealing temperature of LNO films was 700 °C. With the increment of film thickness, the surface resistivity of LNO films reduced. It was found that the LNO films, could induce the crystal orientations of BTO thin films, would greatly expand the application of ferroelectric films in the field of capacitors.

AB - The conductive LaNi03 (LNO) and ferroelectric BaTi03 (BTO) thin films had been prepared by sol-gel method. The preparation process of LNO films had been optimized by studying on the effects of annealing temperature and film thickness on their properties and structures. The optimal annealing temperature of LNO films was 700 °C. With the increment of film thickness, the surface resistivity of LNO films reduced. It was found that the LNO films, could induce the crystal orientations of BTO thin films, would greatly expand the application of ferroelectric films in the field of capacitors.

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Li B, Wang C, Wu W, Zhang W , Zhong Y. Effect of LaNiO₃ electrode on crystallization of BaTiO ₃ thin films for capacitors prepared by solgel technique. In ICEPT-HDP 2011 Proceedings - 2011 International Conference on Electronic Packaging Technology and High Density Packaging. 2011. p. 357-360. 6066852. (ICEPT-HDP 2011 Proceedings - 2011 International Conference on Electronic Packaging Technology and High Density Packaging). doi: 10.1109/ICEPT.2011.6066852