Effect of Eu doping on the electrical properties and energy storage performance of PbZrO 3 antiferroelectric thin films

Mao Ye; Qiu Sun; Xiangqun Chen; Zhaohua Jiang; Fuping Wang

doi:10.1111/j.1551-2916.2011.04814.x

Effect of Eu doping on the electrical properties and energy storage performance of PbZrO ₃ antiferroelectric thin films

Mao Ye
, Qiu Sun
, Xiangqun Chen
, Zhaohua Jiang
, Fuping Wang^*

^*Corresponding author for this work

School of Chemistry and Chemical Engineering, Harbin Institute of Technology
Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

105 Scopus citations

Abstract

Undoped and Eu-doped (1, 3 and 5 mol%) PbZrO₃ (PZ) antiferroelectric (AFE) thin films have been deposited on Pt (111)/Ti/SiO ₂/Si substrates by a sol-gel method. The effect of Eu doping on phase transformation and energy storage performance of PZ thin films have been investigated in detail. It has been seen that on extent of Eu dopant the Curie temperature and electric field-induced phase transformation can be altered. The energy storage properties have been found to be strongly dependent on Eu doping content. With the increase of Eu contents, recoverable energy storage density has been enhanced followed by their subsequent reduction. A maximum energy density (∼18.8 J/cm³ at ∼900 kV/cm) and minimum energy loss (∼7.3 J/cm³) have been achieved on 3 mol% Eu-doped PZ thin films.

Original language	English
Pages (from-to)	3234-3236
Number of pages	3
Journal	Journal of the American Ceramic Society
Volume	94
Issue number	10
DOIs	https://doi.org/10.1111/j.1551-2916.2011.04814.x
State	Published - Oct 2011
Externally published	Yes

Access to Document

10.1111/j.1551-2916.2011.04814.x

Cite this

@article{fabd0bb6d777479ea3e9d2db191f9a71,

title = "Effect of Eu doping on the electrical properties and energy storage performance of PbZrO 3 antiferroelectric thin films",

abstract = "Undoped and Eu-doped (1, 3 and 5 mol\%) PbZrO3 (PZ) antiferroelectric (AFE) thin films have been deposited on Pt (111)/Ti/SiO 2/Si substrates by a sol-gel method. The effect of Eu doping on phase transformation and energy storage performance of PZ thin films have been investigated in detail. It has been seen that on extent of Eu dopant the Curie temperature and electric field-induced phase transformation can be altered. The energy storage properties have been found to be strongly dependent on Eu doping content. With the increase of Eu contents, recoverable energy storage density has been enhanced followed by their subsequent reduction. A maximum energy density (∼18.8 J/cm3 at ∼900 kV/cm) and minimum energy loss (∼7.3 J/cm3) have been achieved on 3 mol\% Eu-doped PZ thin films.",

author = "Mao Ye and Qiu Sun and Xiangqun Chen and Zhaohua Jiang and Fuping Wang",

year = "2011",

month = oct,

doi = "10.1111/j.1551-2916.2011.04814.x",

language = "英语",

volume = "94",

pages = "3234--3236",

journal = "Journal of the American Ceramic Society",

issn = "0002-7820",

publisher = "Wiley-Blackwell",

number = "10",

}

TY - JOUR

T1 - Effect of Eu doping on the electrical properties and energy storage performance of PbZrO 3 antiferroelectric thin films

AU - Ye, Mao

AU - Sun, Qiu

AU - Chen, Xiangqun

AU - Jiang, Zhaohua

AU - Wang, Fuping

PY - 2011/10

Y1 - 2011/10

N2 - Undoped and Eu-doped (1, 3 and 5 mol%) PbZrO3 (PZ) antiferroelectric (AFE) thin films have been deposited on Pt (111)/Ti/SiO 2/Si substrates by a sol-gel method. The effect of Eu doping on phase transformation and energy storage performance of PZ thin films have been investigated in detail. It has been seen that on extent of Eu dopant the Curie temperature and electric field-induced phase transformation can be altered. The energy storage properties have been found to be strongly dependent on Eu doping content. With the increase of Eu contents, recoverable energy storage density has been enhanced followed by their subsequent reduction. A maximum energy density (∼18.8 J/cm3 at ∼900 kV/cm) and minimum energy loss (∼7.3 J/cm3) have been achieved on 3 mol% Eu-doped PZ thin films.

AB - Undoped and Eu-doped (1, 3 and 5 mol%) PbZrO3 (PZ) antiferroelectric (AFE) thin films have been deposited on Pt (111)/Ti/SiO 2/Si substrates by a sol-gel method. The effect of Eu doping on phase transformation and energy storage performance of PZ thin films have been investigated in detail. It has been seen that on extent of Eu dopant the Curie temperature and electric field-induced phase transformation can be altered. The energy storage properties have been found to be strongly dependent on Eu doping content. With the increase of Eu contents, recoverable energy storage density has been enhanced followed by their subsequent reduction. A maximum energy density (∼18.8 J/cm3 at ∼900 kV/cm) and minimum energy loss (∼7.3 J/cm3) have been achieved on 3 mol% Eu-doped PZ thin films.

UR - https://www.scopus.com/pages/publications/80053976218

U2 - 10.1111/j.1551-2916.2011.04814.x

DO - 10.1111/j.1551-2916.2011.04814.x

M3 - 文章

AN - SCOPUS:80053976218

SN - 0002-7820

VL - 94

SP - 3234

EP - 3236

JO - Journal of the American Ceramic Society

JF - Journal of the American Ceramic Society

IS - 10

ER -

Effect of Eu doping on the electrical properties and energy storage performance of PbZrO ₃ antiferroelectric thin films

Abstract

Access to Document

Other files and links

Fingerprint

Cite this