Effect of electron beam irradiation on structure and properties of SiCN thin films prepared by plasma assisted radio frequency magnetron sputtering

W. L. Li; Z. G. Zhang; J. L. Yang; W. D. Fei

doi:10.1016/j.vacuum.2011.09.013

Effect of electron beam irradiation on structure and properties of SiCN thin films prepared by plasma assisted radio frequency magnetron sputtering

W. L. Li
, Z. G. Zhang
, J. L. Yang
, W. D. Fei^*

^*Corresponding author for this work

School of Materials Science and Engineering

Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Silicon carbon nitride thin films were deposited on Si (100) substrate at room temperature by plasma assisted radio frequency magnetron sputtering. The bonding structure and properties of SiCN films irradiated by pulsed electron beams were studied by means of X-ray photoelectron spectroscopy and nano-indentation. The results showed that electron beam irradiation had a great effect on the structure and property of the films. Under sputtering gas pressure of 3.7 Pa, a transition from the (Si,C)N_x bonded structure to the (Si,C)₃N₄ bonded structure was found in the SiCN thin film with electron beam irradiation. At sputtering gas pressure of 6.5 Pa, the enhancement of hardness in the SiCN film after treatment with electron beam irradiation resulted from the promotion of the sp³-hybridization of carbons bonds. Crown

Original language	English
Pages (from-to)	457-460
Number of pages	4
Journal	Vacuum
Volume	86
Issue number	4
DOIs	https://doi.org/10.1016/j.vacuum.2011.09.013
State	Published - 11 Nov 2011

Keywords

Electron beam irradiation
Hardness
SiCN thin film
XPS

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10.1016/j.vacuum.2011.09.013

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@article{0e3680cb9d0c4bb2bc0cc30f91de9b35,

title = "Effect of electron beam irradiation on structure and properties of SiCN thin films prepared by plasma assisted radio frequency magnetron sputtering",

abstract = "Silicon carbon nitride thin films were deposited on Si (100) substrate at room temperature by plasma assisted radio frequency magnetron sputtering. The bonding structure and properties of SiCN films irradiated by pulsed electron beams were studied by means of X-ray photoelectron spectroscopy and nano-indentation. The results showed that electron beam irradiation had a great effect on the structure and property of the films. Under sputtering gas pressure of 3.7 Pa, a transition from the (Si,C)Nx bonded structure to the (Si,C)3N4 bonded structure was found in the SiCN thin film with electron beam irradiation. At sputtering gas pressure of 6.5 Pa, the enhancement of hardness in the SiCN film after treatment with electron beam irradiation resulted from the promotion of the sp3-hybridization of carbons bonds. Crown",

keywords = "Electron beam irradiation, Hardness, SiCN thin film, XPS",

author = "Li, \{W. L.\} and Zhang, \{Z. G.\} and Yang, \{J. L.\} and Fei, \{W. D.\}",

year = "2011",

month = nov,

day = "11",

doi = "10.1016/j.vacuum.2011.09.013",

language = "英语",

volume = "86",

pages = "457--460",

journal = "Vacuum",

issn = "0042-207X",

publisher = "Elsevier Ltd",

number = "4",

}

TY - JOUR

T1 - Effect of electron beam irradiation on structure and properties of SiCN thin films prepared by plasma assisted radio frequency magnetron sputtering

AU - Li, W. L.

AU - Zhang, Z. G.

AU - Yang, J. L.

AU - Fei, W. D.

PY - 2011/11/11

Y1 - 2011/11/11

N2 - Silicon carbon nitride thin films were deposited on Si (100) substrate at room temperature by plasma assisted radio frequency magnetron sputtering. The bonding structure and properties of SiCN films irradiated by pulsed electron beams were studied by means of X-ray photoelectron spectroscopy and nano-indentation. The results showed that electron beam irradiation had a great effect on the structure and property of the films. Under sputtering gas pressure of 3.7 Pa, a transition from the (Si,C)Nx bonded structure to the (Si,C)3N4 bonded structure was found in the SiCN thin film with electron beam irradiation. At sputtering gas pressure of 6.5 Pa, the enhancement of hardness in the SiCN film after treatment with electron beam irradiation resulted from the promotion of the sp3-hybridization of carbons bonds. Crown

AB - Silicon carbon nitride thin films were deposited on Si (100) substrate at room temperature by plasma assisted radio frequency magnetron sputtering. The bonding structure and properties of SiCN films irradiated by pulsed electron beams were studied by means of X-ray photoelectron spectroscopy and nano-indentation. The results showed that electron beam irradiation had a great effect on the structure and property of the films. Under sputtering gas pressure of 3.7 Pa, a transition from the (Si,C)Nx bonded structure to the (Si,C)3N4 bonded structure was found in the SiCN thin film with electron beam irradiation. At sputtering gas pressure of 6.5 Pa, the enhancement of hardness in the SiCN film after treatment with electron beam irradiation resulted from the promotion of the sp3-hybridization of carbons bonds. Crown

KW - Electron beam irradiation

KW - Hardness

KW - SiCN thin film

KW - XPS

UR - https://www.scopus.com/pages/publications/81855196980

U2 - 10.1016/j.vacuum.2011.09.013

DO - 10.1016/j.vacuum.2011.09.013

M3 - 文章

AN - SCOPUS:81855196980

SN - 0042-207X

VL - 86

SP - 457

EP - 460

JO - Vacuum

JF - Vacuum

IS - 4

ER -

Effect of electron beam irradiation on structure and properties of SiCN thin films prepared by plasma assisted radio frequency magnetron sputtering

Abstract

Keywords

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