Effect of Drift Length on Shifts in 400-V SOI LDMOS Breakdown Voltage Due to TID

Lei Shu; Yuan Fu Zhao; Kenneth F. Galloway; Liang Wang; Xin Sheng Wang; Zhang Yi An Yuan; Xin Zhou; Wei Ping Chen; Ming Qiao; Tian Qi Wang

doi:10.1109/TNS.2020.2970743

Effect of Drift Length on Shifts in 400-V SOI LDMOS Breakdown Voltage Due to TID

Lei Shu
, Yuan Fu Zhao^*
, Kenneth F. Galloway^*
, Liang Wang
, Xin Sheng Wang
, Zhang Yi An Yuan
, Xin Zhou
, Wei Ping Chen
, Ming Qiao^*
, Tian Qi Wang^*

^*Corresponding author for this work

School of Astronautics

Harbin Institute of Technology
Vanderbilt University
Beijing Microelectronics Technology Institute
Harbin Institute of Technology Weihai
University of Electronic Science and Technology of China

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Recently, Shu et al. published 'Numerical and Experimental Investigation of TID Radiation Effect on the Breakdown Voltage of 400 V SOI NLDMOS.' This short article is an extension of that earlier article. The breakdown voltage of 400-V silicon-on-insulator n-channel laterally diffused metal-oxide semiconductor field-effect transistors with different drift region lengths are examined after exposure to total ionizing dose. The variation observed is analyzed using technology computer-aided design simulation.

Original language	English
Article number	8977477
Pages (from-to)	2392-2395
Number of pages	4
Journal	IEEE Transactions on Nuclear Science
Volume	67
Issue number	11
DOIs	https://doi.org/10.1109/TNS.2020.2970743
State	Published - Nov 2020

Keywords

Breakdown voltage
drift region length
silicon-on-insulator (SOI) laterally diffused metal oxide semiconductor field-effect transistors (LDMOSFETs)
technology computer-aided design (TCAD) simulation
total dose

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10.1109/TNS.2020.2970743

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title = "Effect of Drift Length on Shifts in 400-V SOI LDMOS Breakdown Voltage Due to TID",

abstract = "Recently, Shu et al. published 'Numerical and Experimental Investigation of TID Radiation Effect on the Breakdown Voltage of 400 V SOI NLDMOS.' This short article is an extension of that earlier article. The breakdown voltage of 400-V silicon-on-insulator n-channel laterally diffused metal-oxide semiconductor field-effect transistors with different drift region lengths are examined after exposure to total ionizing dose. The variation observed is analyzed using technology computer-aided design simulation.",

keywords = "Breakdown voltage, drift region length, silicon-on-insulator (SOI) laterally diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), technology computer-aided design (TCAD) simulation, total dose",

author = "Lei Shu and Zhao, \{Yuan Fu\} and Galloway, \{Kenneth F.\} and Liang Wang and Wang, \{Xin Sheng\} and Yuan, \{Zhang Yi An\} and Xin Zhou and Chen, \{Wei Ping\} and Ming Qiao and Wang, \{Tian Qi\}",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2020",

month = nov,

doi = "10.1109/TNS.2020.2970743",

language = "英语",

volume = "67",

pages = "2392--2395",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - Effect of Drift Length on Shifts in 400-V SOI LDMOS Breakdown Voltage Due to TID

AU - Shu, Lei

AU - Zhao, Yuan Fu

AU - Galloway, Kenneth F.

AU - Wang, Liang

AU - Wang, Xin Sheng

AU - Yuan, Zhang Yi An

AU - Zhou, Xin

AU - Chen, Wei Ping

AU - Qiao, Ming

AU - Wang, Tian Qi

PY - 2020/11

Y1 - 2020/11

N2 - Recently, Shu et al. published 'Numerical and Experimental Investigation of TID Radiation Effect on the Breakdown Voltage of 400 V SOI NLDMOS.' This short article is an extension of that earlier article. The breakdown voltage of 400-V silicon-on-insulator n-channel laterally diffused metal-oxide semiconductor field-effect transistors with different drift region lengths are examined after exposure to total ionizing dose. The variation observed is analyzed using technology computer-aided design simulation.

AB - Recently, Shu et al. published 'Numerical and Experimental Investigation of TID Radiation Effect on the Breakdown Voltage of 400 V SOI NLDMOS.' This short article is an extension of that earlier article. The breakdown voltage of 400-V silicon-on-insulator n-channel laterally diffused metal-oxide semiconductor field-effect transistors with different drift region lengths are examined after exposure to total ionizing dose. The variation observed is analyzed using technology computer-aided design simulation.

KW - Breakdown voltage

KW - drift region length

KW - silicon-on-insulator (SOI) laterally diffused metal oxide semiconductor field-effect transistors (LDMOSFETs)

KW - technology computer-aided design (TCAD) simulation

KW - total dose

UR - https://www.scopus.com/pages/publications/85096805755

U2 - 10.1109/TNS.2020.2970743

DO - 10.1109/TNS.2020.2970743

M3 - 文章

AN - SCOPUS:85096805755

SN - 0018-9499

VL - 67

SP - 2392

EP - 2395

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 11

M1 - 8977477

ER -

Effect of Drift Length on Shifts in 400-V SOI LDMOS Breakdown Voltage Due to TID

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