@inproceedings{d612cf2016994f4a85561cc6fb71ac3a,
title = "Effect of deposition temperature on I-V characteristics of vanadium oxide film",
abstract = "In this paper, the effects of deposition temperatures on the resistive switching characteristics of polycrystalline vanadium oxide thin films have been investigated. VOx thin films were prepared by reactive sputtering at various deposition temperatures (RT, 250 °C, 350 °C, and 450 °C, respectively). Xray photoelectron spectroscopy revealed the compositions of VOx thin films. Electrical switching has been observed in Cu(tip)/VOx/Cu memory units by Semiconductor Device Analyzer. Crystalline characterizations revealed that asdeposited (RT) film was amorphous, the films crystallized into different phases (e.g. VO2, V2O5, VO1.86 etc.) with increasing the deposition temperatures. The VOx memory units have low Vset and Vreset. Furthermore, their set voltage decreased from 1.52 V to 0.45 V and reset voltage decreased from 1.01 V to 0.41 V with increasing the deposition temperatures from 250 °C to 450 °C, respectively. The thin films have three orders of change in resistivity between ON-state and OFF-state except asdeposited film. The vanadium oxide thin film can be a promising material for low power nonvolatile memory applications.",
author = "Wei, \{X. Y.\} and M. Hu and F. Wang and J. Wei and Zhang, \{K. L.\}",
year = "2012",
doi = "10.1115/IMECE2012-87232",
language = "英语",
isbn = "9780791845257",
series = "ASME International Mechanical Engineering Congress and Exposition, Proceedings (IMECE)",
publisher = "American Society of Mechanical Engineers (ASME)",
number = "PARTS A AND B",
pages = "419--422",
booktitle = "Micro- and Nano-Systems Engineering and Packaging",
address = "美国",
edition = "PARTS A AND B",
note = "ASME 2012 International Mechanical Engineering Congress and Exposition, IMECE 2012 ; Conference date: 09-11-2012 Through 15-11-2012",
}