Abstract
Titanium nitride (TiNx) films were deposited on 304 stainless steel and silicon (100) wafers by ion source assisted magnetron sputtering. The effect of substrate bias voltage on the preparation and properties of TiNx films was investigated. The results show that as the substrate bias voltage increases from 0 V to −400 V, the deposition rate of TiNx film decreases significantly and the density increases, which can be attributed to the re-sputtering effect at high ion bombardment. The texture of TiNx films varies gradually from (111) to (200) with the increase of energy delivered into the growing film. The hardness of the film deposited under −200 V bias voltage reaches the maximum value, 12.9 GPa. Meanwhile, the toughness and corrosion resistance of the film reach a maximum at a bias voltage of −400 V. In conclusion, the density, hardness, toughness and corrosion resistance of TiNx films can be increased by changing the substrate bias voltage.
| Original language | English |
|---|---|
| Pages (from-to) | 60-67 |
| Number of pages | 8 |
| Journal | Thin Solid Films |
| Volume | 676 |
| DOIs | |
| State | Published - 30 Apr 2019 |
| Externally published | Yes |
Keywords
- Bias voltage
- Corrosion resistance
- Mechanical properties
- Re-sputtering
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