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Effect of assistant rf field on phase composition of iron nitride film prepared by magnetron sputtering process

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Abstract

Fe-N thin films were fabricated using a direct current magnetron sputtering process assisted by a radio-frequency (rf) field. The effect of the rf field on the phase composition of the films was investigated. The results indicate that with the assistance of the rf field, various kinds of iron nitrides can be obtained in the films, including α′ -Fe-N, α″ - Fe16 N2, α- Fe2 N, ε- Fe3 N, and γ″ -FeN with ZnS structure. It was found that the rf field greatly benefits the formation of iron nitrides in the Fe-N films.

Original languageEnglish
Pages (from-to)170-173
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume24
Issue number1
DOIs
StatePublished - Jan 2006

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