Effect of annealing on the properties of N-doped ZnO films deposited by RF magnetron sputtering

Jinzhong Wang; Elangovan Elamurugu; Vincent Sallet; François Jomard; Alain Lusson; Ana M.Botelho do Rego; Pedro Barquinha; Gonçalo Gonçalves; Rodrigo Martins; Elvira Fortunato

doi:10.1016/j.apsusc.2008.05.321

Effect of annealing on the properties of N-doped ZnO films deposited by RF magnetron sputtering

Jinzhong Wang^*
, Elangovan Elamurugu
, Vincent Sallet
, François Jomard
, Alain Lusson
, Ana M.Botelho do Rego
, Pedro Barquinha
, Gonçalo Gonçalves
, Rodrigo Martins
, Elvira Fortunato

^*Corresponding author for this work

NOVA University Lisbon
Université Paris-Saclay
University of Lisbon

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

N-doped ZnO films were deposited by RF magnetron sputtering in N ₂ /Ar gas mixture and were post-annealed at different temperatures (T _a ) ranging from 400 to 800 °C in O ₂ gas at atmospheric pressure. The as-deposited and post-annealed films were characterized by their structural (XRD), compositional (SIMS, XPS), optical (UV-vis-NIR spectrometry), electrical (Hall measurements), and optoelectronic properties (PL spectra). The XRD results authenticate the improvement of crystallinity following post-annealing. The weak intensity of the (0 0 2) reflection obtained for the as-deposited N-doped ZnO films was increased with the increasing T _a to become the preferred orientation at higher T _a (800 °C). The amount of N-concentration and the chemical states of N element in ZnO films were changed with the T _a , especially above 400 °C. The average visible transmittance (400-800 nm) of the as-deposited films (26%) was increased with the increasing T _a to reach a maximum of 75% at 600 °C but then decreased. In the PL spectra, A ⁰ X emission at 3.321 eV was observed for T _a = 400 °C besides the main D ⁰ X emission. The intensity of the A ⁰ X emission was decreased with the increasing T _a whereas D ⁰ X emission became sharper and more optical emission centers were observed when T _a is increased above 400 °C.

Original language	English
Pages (from-to)	7178-7182
Number of pages	5
Journal	Applied Surface Science
Volume	254
Issue number	22
DOIs	https://doi.org/10.1016/j.apsusc.2008.05.321
State	Published - 15 Sep 2008
Externally published	Yes

Keywords

PL spectra
SIMS depth profiling
XPS analysis
ZnO thin films

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10.1016/j.apsusc.2008.05.321

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@article{ad86724cde4a472da80fb2cce60fde2b,

title = "Effect of annealing on the properties of N-doped ZnO films deposited by RF magnetron sputtering",

abstract = " N-doped ZnO films were deposited by RF magnetron sputtering in N 2 /Ar gas mixture and were post-annealed at different temperatures (T a ) ranging from 400 to 800 °C in O 2 gas at atmospheric pressure. The as-deposited and post-annealed films were characterized by their structural (XRD), compositional (SIMS, XPS), optical (UV-vis-NIR spectrometry), electrical (Hall measurements), and optoelectronic properties (PL spectra). The XRD results authenticate the improvement of crystallinity following post-annealing. The weak intensity of the (0 0 2) reflection obtained for the as-deposited N-doped ZnO films was increased with the increasing T a to become the preferred orientation at higher T a (800 °C). The amount of N-concentration and the chemical states of N element in ZnO films were changed with the T a , especially above 400 °C. The average visible transmittance (400-800 nm) of the as-deposited films (26\%) was increased with the increasing T a to reach a maximum of 75\% at 600 °C but then decreased. In the PL spectra, A 0 X emission at 3.321 eV was observed for T a = 400 °C besides the main D 0 X emission. The intensity of the A 0 X emission was decreased with the increasing T a whereas D 0 X emission became sharper and more optical emission centers were observed when T a is increased above 400 °C.",

keywords = "PL spectra, SIMS depth profiling, XPS analysis, ZnO thin films",

author = "Jinzhong Wang and Elangovan Elamurugu and Vincent Sallet and Fran{\c c}ois Jomard and Alain Lusson and Rego, \{Ana M.Botelho do\} and Pedro Barquinha and Gon{\c c}alo Gon{\c c}alves and Rodrigo Martins and Elvira Fortunato",

year = "2008",

month = sep,

day = "15",

doi = "10.1016/j.apsusc.2008.05.321",

language = "英语",

volume = "254",

pages = "7178--7182",

journal = "Applied Surface Science",

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number = "22",

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TY - JOUR

T1 - Effect of annealing on the properties of N-doped ZnO films deposited by RF magnetron sputtering

AU - Wang, Jinzhong

AU - Elamurugu, Elangovan

AU - Sallet, Vincent

AU - Jomard, François

AU - Lusson, Alain

AU - Rego, Ana M.Botelho do

AU - Barquinha, Pedro

AU - Gonçalves, Gonçalo

AU - Martins, Rodrigo

AU - Fortunato, Elvira

PY - 2008/9/15

Y1 - 2008/9/15

N2 - N-doped ZnO films were deposited by RF magnetron sputtering in N 2 /Ar gas mixture and were post-annealed at different temperatures (T a ) ranging from 400 to 800 °C in O 2 gas at atmospheric pressure. The as-deposited and post-annealed films were characterized by their structural (XRD), compositional (SIMS, XPS), optical (UV-vis-NIR spectrometry), electrical (Hall measurements), and optoelectronic properties (PL spectra). The XRD results authenticate the improvement of crystallinity following post-annealing. The weak intensity of the (0 0 2) reflection obtained for the as-deposited N-doped ZnO films was increased with the increasing T a to become the preferred orientation at higher T a (800 °C). The amount of N-concentration and the chemical states of N element in ZnO films were changed with the T a , especially above 400 °C. The average visible transmittance (400-800 nm) of the as-deposited films (26%) was increased with the increasing T a to reach a maximum of 75% at 600 °C but then decreased. In the PL spectra, A 0 X emission at 3.321 eV was observed for T a = 400 °C besides the main D 0 X emission. The intensity of the A 0 X emission was decreased with the increasing T a whereas D 0 X emission became sharper and more optical emission centers were observed when T a is increased above 400 °C.

AB - N-doped ZnO films were deposited by RF magnetron sputtering in N 2 /Ar gas mixture and were post-annealed at different temperatures (T a ) ranging from 400 to 800 °C in O 2 gas at atmospheric pressure. The as-deposited and post-annealed films were characterized by their structural (XRD), compositional (SIMS, XPS), optical (UV-vis-NIR spectrometry), electrical (Hall measurements), and optoelectronic properties (PL spectra). The XRD results authenticate the improvement of crystallinity following post-annealing. The weak intensity of the (0 0 2) reflection obtained for the as-deposited N-doped ZnO films was increased with the increasing T a to become the preferred orientation at higher T a (800 °C). The amount of N-concentration and the chemical states of N element in ZnO films were changed with the T a , especially above 400 °C. The average visible transmittance (400-800 nm) of the as-deposited films (26%) was increased with the increasing T a to reach a maximum of 75% at 600 °C but then decreased. In the PL spectra, A 0 X emission at 3.321 eV was observed for T a = 400 °C besides the main D 0 X emission. The intensity of the A 0 X emission was decreased with the increasing T a whereas D 0 X emission became sharper and more optical emission centers were observed when T a is increased above 400 °C.

KW - PL spectra

KW - SIMS depth profiling

KW - XPS analysis

KW - ZnO thin films

UR - https://www.scopus.com/pages/publications/50849129137

U2 - 10.1016/j.apsusc.2008.05.321

DO - 10.1016/j.apsusc.2008.05.321

M3 - 文章

AN - SCOPUS:50849129137

SN - 0169-4332

VL - 254

SP - 7178

EP - 7182

JO - Applied Surface Science

JF - Applied Surface Science

IS - 22

ER -

Effect of annealing on the properties of N-doped ZnO films deposited by RF magnetron sputtering

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Keywords

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