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Effect of A Site and Oxygen Vacancies on the Structural and Electronic Properties of Lead-Free KTa0.5Nb0.5O3 Crystal

  • Wenlong Yang
  • , Li Wang
  • , Jiaqi Lin*
  • , Xiaokang Li
  • , Hanjiang Xiu
  • , Yanqing Shen
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The structural and electronic properties of lead-free potassium tantalite niobate KTa0.5Nb0.5O3 (KTN) with A site vacancies VK0, VK1- and oxygen vacancies VO0, VO2+, were investigated by first-principles calculations, which indicated that A site vacancies VK0 are likely to form in the KTN compared with VK1- , and oxygen vacancies VO2+ are likely to form compared with VO0 in the KTN according to the investigation of formation energy. The results show that K and O vacancies have significant influence on the atomic interactions of the atoms and the electronic performance of the materials. And Ta atoms are more easily influenced by the K and O vacancies than the Nb atoms from the atomic displacements in KTN with K and O vacancies. The investigation of density of state indicates that the compensation of electrons in KTN with vacancies make the hybridization become stronger among Ta d, Nb d and O p orbitals. Besides, Mulliken population of all the Ta and Nb atoms in KTN with charged vacancies are influenced by complement electrons. The strength of the Nb-O bond is stronger than Ta-O based on the changes of bond lengths and Mulliken population.

Original languageEnglish
Pages (from-to)3726-3733
Number of pages8
JournalJournal of Electronic Materials
Volume45
Issue number7
DOIs
StatePublished - 1 Jul 2016

Keywords

  • KTaNbO
  • electronic properties
  • first principle
  • vacancies

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