Dynamic mixing deposition of niobium nitride films by cathodic arc plasma in ambient nitrogen

T. Zhang; J. H. Song; X. B. Tian; P. K. Chu; I. G. Brown

doi:10.1116/1.1372896

Dynamic mixing deposition of niobium nitride films by cathodic arc plasma in ambient nitrogen

T. Zhang
, J. H. Song
, X. B. Tian
, P. K. Chu^*
, I. G. Brown

^*Corresponding author for this work

Beijing Normal University
City University of Hong Kong
University of California at Berkeley

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The synthesis and properties of niobium nitride films using niobium cathodic arc plasma reactive deposition in a nitrogen atmosphere with and without energetic ion dynamic mixing was discussed. The nitrogen content was higher in the films deposited using energetic ion dynamic mixing at a maximum substrate temperature of 180°centigrate. The films deposited without energetic ion dynamic mixing was found to be smooth and continuous while those with energetic ion dynamic mixing exhibit delamination due to poor adhesion. The results showed that with energetic ion dynamic mixing, niobium nitride films could be fabricated at low substrate temperature using a niobium metal arc plasma source in a nitrogen immersion configuration.

Original language	English
Pages (from-to)	2048-2050
Number of pages	3
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	19
Issue number	5
DOIs	https://doi.org/10.1116/1.1372896
State	Published - Sep 2001
Externally published	Yes

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title = "Dynamic mixing deposition of niobium nitride films by cathodic arc plasma in ambient nitrogen",

abstract = "The synthesis and properties of niobium nitride films using niobium cathodic arc plasma reactive deposition in a nitrogen atmosphere with and without energetic ion dynamic mixing was discussed. The nitrogen content was higher in the films deposited using energetic ion dynamic mixing at a maximum substrate temperature of 180°centigrate. The films deposited without energetic ion dynamic mixing was found to be smooth and continuous while those with energetic ion dynamic mixing exhibit delamination due to poor adhesion. The results showed that with energetic ion dynamic mixing, niobium nitride films could be fabricated at low substrate temperature using a niobium metal arc plasma source in a nitrogen immersion configuration.",

author = "T. Zhang and Song, \{J. H.\} and Tian, \{X. B.\} and Chu, \{P. K.\} and Brown, \{I. G.\}",

year = "2001",

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TY - JOUR

T1 - Dynamic mixing deposition of niobium nitride films by cathodic arc plasma in ambient nitrogen

AU - Zhang, T.

AU - Song, J. H.

AU - Tian, X. B.

AU - Chu, P. K.

AU - Brown, I. G.

PY - 2001/9

Y1 - 2001/9

N2 - The synthesis and properties of niobium nitride films using niobium cathodic arc plasma reactive deposition in a nitrogen atmosphere with and without energetic ion dynamic mixing was discussed. The nitrogen content was higher in the films deposited using energetic ion dynamic mixing at a maximum substrate temperature of 180°centigrate. The films deposited without energetic ion dynamic mixing was found to be smooth and continuous while those with energetic ion dynamic mixing exhibit delamination due to poor adhesion. The results showed that with energetic ion dynamic mixing, niobium nitride films could be fabricated at low substrate temperature using a niobium metal arc plasma source in a nitrogen immersion configuration.

AB - The synthesis and properties of niobium nitride films using niobium cathodic arc plasma reactive deposition in a nitrogen atmosphere with and without energetic ion dynamic mixing was discussed. The nitrogen content was higher in the films deposited using energetic ion dynamic mixing at a maximum substrate temperature of 180°centigrate. The films deposited without energetic ion dynamic mixing was found to be smooth and continuous while those with energetic ion dynamic mixing exhibit delamination due to poor adhesion. The results showed that with energetic ion dynamic mixing, niobium nitride films could be fabricated at low substrate temperature using a niobium metal arc plasma source in a nitrogen immersion configuration.

UR - https://www.scopus.com/pages/publications/0035440004

U2 - 10.1116/1.1372896

DO - 10.1116/1.1372896

M3 - 文章

AN - SCOPUS:0035440004

SN - 0734-2101

VL - 19

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JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 5

ER -

Dynamic mixing deposition of niobium nitride films by cathodic arc plasma in ambient nitrogen

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