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Dynamic exposure model of laser direct writing in Cartesian coordinate

  • Shan Zhang*
  • , Jiu Bin Tan
  • , Lei Wang
  • , Zhan Lei Jin
  • *Corresponding author for this work
  • Harbin Institute of Technology

Research output: Contribution to journalArticlepeer-review

Abstract

A new dynamic exposure model was proposed to predict the laser direct writing quality in Cartesian coordinate exactly. By considering the effect of photoresist absorbing beam energy, the Gaussian distribution of writing beam and the dynamic exposure process, numerical simulation results indicate that when the incident laser beam is shape of constant Gauss, the results obtained by proposed model agree well with that by Dill model under equivalent conditions. The model makes up the shortcomings of the traditional models and can be taken as an appropriate solution to the dynamic exposure process. Based on the model, the influences of the direct writing power and velocity on the profile of writing line are also analyzed, which can be considered as an effect analysis method for optimizing the parameters of laser direct writing.

Original languageEnglish
Pages (from-to)1354-1360
Number of pages7
JournalGuangxue Jingmi Gongcheng/Optics and Precision Engineering
Volume16
Issue number8
StatePublished - Aug 2008

Keywords

  • Dill exposure model
  • Exposure dose distribution
  • Laser direct writing photolithography
  • Line profile

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