Abstract
This article proposes a technique called Genetic Algorithm Gate Driver (GAGD) that utilizes genetic algorithms to optimize the gate driving characteristics. To achieve this, a gate characteristic testing platform with high bandwidth, high voltage swing, and high output speed is designed. This platform uses genetic algorithms to generate gate voltage waveforms, drive insulated gate bipolar transistors (IGBTs), and optimize the output voltage waveform. The gate driving method of the IGBT is iteratively optimized under the constraints of turn-on losses and turn-on stress. Finally, experimental comparisons are conducted with traditional gate driving techniques during the turn-on process. The experimental results demonstrate that the optimized drive mode using genetic algorithms exhibits good transient characteristics.
| Original language | English |
|---|---|
| Title of host publication | PCIM Asia 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Conference Proceedings |
| Publisher | VDE Verlag GmbH |
| Pages | 78-83 |
| Number of pages | 6 |
| ISBN (Electronic) | 9783800761326 |
| DOIs | |
| State | Published - 2023 |
| Event | 2023 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Asia 2023 - Shanghai, China Duration: 29 Aug 2023 → 31 Aug 2023 |
Publication series
| Name | PCIM Asia 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Conference Proceedings |
|---|
Conference
| Conference | 2023 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Asia 2023 |
|---|---|
| Country/Territory | China |
| City | Shanghai |
| Period | 29/08/23 → 31/08/23 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
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