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Dopant occupancy and increased exposure energy of Zr:Yb:Ho:LiNbO 3 crystals

  • Li Dai*
  • , Shanshan Jiao
  • , Chao Xu
  • , Dayong Li
  • , Jiaqi Lin
  • , Chuntian Chen
  • *Corresponding author for this work
  • Harbin University of Science and Technology

Research output: Contribution to journalArticlepeer-review

Abstract

Yb:Ho:LiNbO3 crystals tridoped with various Zr4+ concentrations (0, 1, 2 and 5 mol%) were grown by Czochraski technique. Defect structure and dopant occupancy of Zr:Yb:Ho:LiNbO3 crystals were determined by IR transmission spectrum. The effective distribution coefficient of Zr ion increases with increasing ZrO2 concentration in the melts, which is near to one. The light-induced scattering of Zr:Yb:Ho:LiNbO3 crystals was quantitatively measured via the incident exposure energy. The exposure energy of Zr (5 mol%):Yb:Ho:LiNbO3 crystal is 49.33 J/cm2, which is two orders higher than that of Yb:Ho:LiNbO 3 crystal in magnitude. The photoconductivity is key factor to understand the internal relationship between the dopant occupancy and exposure energy of the crystals.

Original languageEnglish
Pages (from-to)132-135
Number of pages4
JournalMaterials Research Bulletin
Volume53
DOIs
StatePublished - May 2014

Keywords

  • B. Crystal growth
  • C. Infrared spectroscopy
  • D. Crystal structure

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