Donor-acceptor pair luminescence of nitrogen doping p-type ZnO by plasma-assisted molecular beam epitaxy

S. J. Jiao; Y. M. Lu; D. Z. Shen; Z. Z. Zhang; B. H. Li; Zh H. Zheng; B. Yao; J. Y. Zhang; D. X. Zhao; X. W. Fan

doi:10.1016/j.jlumin.2006.01.192

Donor-acceptor pair luminescence of nitrogen doping p-type ZnO by plasma-assisted molecular beam epitaxy

S. J. Jiao
, Y. M. Lu^*
, D. Z. Shen
, Z. Z. Zhang
, B. H. Li
, Zh H. Zheng
, B. Yao
, J. Y. Zhang
, D. X. Zhao
, X. W. Fan

^*Corresponding author for this work

CAS - Changchun Institute of Optics Fine Mechanics and Physics
University of Chinese Academy of Sciences

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

We have grown N-doped p-type ZnO films by plasma-assisted molecular beam epitaxy. A dominant photoluminescence around 3.260 eV was observed at low temperature. By studying the dependence of photoluminescence on excitation density at 80 K, the emission around 3.260 eV can be attributed to a donor-acceptor pair transition. Time-resolved PL spectrum was also used to investigate the dynamics of the donor-acceptor pair recombination. The observed non-exponential decay curve was fitted by a fast component and long process. In long decay process, the curve was predicted to follow the power law t^-1. Therefore it can be concluded that the emission at 3.260 eV in our sample is of a tunnel-assisted donor-acceptor pair nature.

Original language	English
Pages (from-to)	368-370
Number of pages	3
Journal	Journal of Luminescence
Volume	122-123
Issue number	1-2
DOIs	https://doi.org/10.1016/j.jlumin.2006.01.192
State	Published - Jan 2007
Externally published	Yes

Keywords

Donor-acceptor pair
Molecular beam epitaxy
Optical properties
p-Type ZnO

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10.1016/j.jlumin.2006.01.192

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@article{58007b24066a4c5a9a3bb3fd170aa59b,

title = "Donor-acceptor pair luminescence of nitrogen doping p-type ZnO by plasma-assisted molecular beam epitaxy",

abstract = "We have grown N-doped p-type ZnO films by plasma-assisted molecular beam epitaxy. A dominant photoluminescence around 3.260 eV was observed at low temperature. By studying the dependence of photoluminescence on excitation density at 80 K, the emission around 3.260 eV can be attributed to a donor-acceptor pair transition. Time-resolved PL spectrum was also used to investigate the dynamics of the donor-acceptor pair recombination. The observed non-exponential decay curve was fitted by a fast component and long process. In long decay process, the curve was predicted to follow the power law t-1. Therefore it can be concluded that the emission at 3.260 eV in our sample is of a tunnel-assisted donor-acceptor pair nature.",

keywords = "Donor-acceptor pair, Molecular beam epitaxy, Optical properties, p-Type ZnO",

author = "Jiao, \{S. J.\} and Lu, \{Y. M.\} and Shen, \{D. Z.\} and Zhang, \{Z. Z.\} and Li, \{B. H.\} and Zheng, \{Zh H.\} and B. Yao and Zhang, \{J. Y.\} and Zhao, \{D. X.\} and Fan, \{X. W.\}",

year = "2007",

month = jan,

doi = "10.1016/j.jlumin.2006.01.192",

language = "英语",

volume = "122-123",

pages = "368--370",

journal = "Journal of Luminescence",

issn = "0022-2313",

publisher = "Elsevier B.V.",

number = "1-2",

}

TY - JOUR

T1 - Donor-acceptor pair luminescence of nitrogen doping p-type ZnO by plasma-assisted molecular beam epitaxy

AU - Jiao, S. J.

AU - Lu, Y. M.

AU - Shen, D. Z.

AU - Zhang, Z. Z.

AU - Li, B. H.

AU - Zheng, Zh H.

AU - Yao, B.

AU - Zhang, J. Y.

AU - Zhao, D. X.

AU - Fan, X. W.

PY - 2007/1

Y1 - 2007/1

N2 - We have grown N-doped p-type ZnO films by plasma-assisted molecular beam epitaxy. A dominant photoluminescence around 3.260 eV was observed at low temperature. By studying the dependence of photoluminescence on excitation density at 80 K, the emission around 3.260 eV can be attributed to a donor-acceptor pair transition. Time-resolved PL spectrum was also used to investigate the dynamics of the donor-acceptor pair recombination. The observed non-exponential decay curve was fitted by a fast component and long process. In long decay process, the curve was predicted to follow the power law t-1. Therefore it can be concluded that the emission at 3.260 eV in our sample is of a tunnel-assisted donor-acceptor pair nature.

AB - We have grown N-doped p-type ZnO films by plasma-assisted molecular beam epitaxy. A dominant photoluminescence around 3.260 eV was observed at low temperature. By studying the dependence of photoluminescence on excitation density at 80 K, the emission around 3.260 eV can be attributed to a donor-acceptor pair transition. Time-resolved PL spectrum was also used to investigate the dynamics of the donor-acceptor pair recombination. The observed non-exponential decay curve was fitted by a fast component and long process. In long decay process, the curve was predicted to follow the power law t-1. Therefore it can be concluded that the emission at 3.260 eV in our sample is of a tunnel-assisted donor-acceptor pair nature.

KW - Donor-acceptor pair

KW - Molecular beam epitaxy

KW - Optical properties

KW - p-Type ZnO

UR - https://www.scopus.com/pages/publications/33750943653

U2 - 10.1016/j.jlumin.2006.01.192

DO - 10.1016/j.jlumin.2006.01.192

M3 - 文章

AN - SCOPUS:33750943653

SN - 0022-2313

VL - 122-123

SP - 368

EP - 370

JO - Journal of Luminescence

JF - Journal of Luminescence

IS - 1-2

ER -

Donor-acceptor pair luminescence of nitrogen doping p-type ZnO by plasma-assisted molecular beam epitaxy

Abstract

Keywords

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