Dominant role of oxygen vacancies in electrical properties of unannealed LaAlO3/SrTiO3 interfaces

Z. Q. Liu; L. Sun; Z. Huang; C. J. Li; S. W. Zeng; K. Han; W. M. Lü; T. Venkatesan; Ariando

doi:10.1063/1.4863800

Dominant role of oxygen vacancies in electrical properties of unannealed LaAlO₃/SrTiO₃ interfaces

Z. Q. Liu^*
, L. Sun
, Z. Huang
, C. J. Li
, S. W. Zeng
, K. Han
, W. M. Lü
, T. Venkatesan
, Ariando

^*Corresponding author for this work

National University of Singapore
Oak Ridge National Laboratory

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

We report that in unannealed LaAlO₃/SrTiO₃ (LAO/STO) heterostructures the critical thickness for the appearance of the two-dimensional electron gas can be less than 4 unit cell, the interface is conducting even for STO substrates with mixed terminations and the low-temperature resistance upturn in LAO/STO heterostructures with thick LAO layers strongly depends on laser fluence. Our experimental results provide fundamental insights into the different roles played by oxygen vacancies and polarization catastrophe in the two-dimensional electron gas in crystalline LAO/STO heterostructures.

Original language	English
Article number	054303
Journal	Journal of Applied Physics
Volume	115
Issue number	5
DOIs	https://doi.org/10.1063/1.4863800
State	Published - 7 Feb 2014
Externally published	Yes

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title = "Dominant role of oxygen vacancies in electrical properties of unannealed LaAlO3/SrTiO3 interfaces",

abstract = "We report that in unannealed LaAlO3/SrTiO3 (LAO/STO) heterostructures the critical thickness for the appearance of the two-dimensional electron gas can be less than 4 unit cell, the interface is conducting even for STO substrates with mixed terminations and the low-temperature resistance upturn in LAO/STO heterostructures with thick LAO layers strongly depends on laser fluence. Our experimental results provide fundamental insights into the different roles played by oxygen vacancies and polarization catastrophe in the two-dimensional electron gas in crystalline LAO/STO heterostructures.",

author = "Liu, \{Z. Q.\} and L. Sun and Z. Huang and Li, \{C. J.\} and Zeng, \{S. W.\} and K. Han and L{\"u}, \{W. M.\} and T. Venkatesan and Ariando",

year = "2014",

month = feb,

day = "7",

doi = "10.1063/1.4863800",

language = "英语",

volume = "115",

journal = "Journal of Applied Physics",

issn = "0021-8979",

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TY - JOUR

T1 - Dominant role of oxygen vacancies in electrical properties of unannealed LaAlO3/SrTiO3 interfaces

AU - Liu, Z. Q.

AU - Sun, L.

AU - Huang, Z.

AU - Li, C. J.

AU - Zeng, S. W.

AU - Han, K.

AU - Lü, W. M.

AU - Venkatesan, T.

AU - Ariando,

PY - 2014/2/7

Y1 - 2014/2/7

N2 - We report that in unannealed LaAlO3/SrTiO3 (LAO/STO) heterostructures the critical thickness for the appearance of the two-dimensional electron gas can be less than 4 unit cell, the interface is conducting even for STO substrates with mixed terminations and the low-temperature resistance upturn in LAO/STO heterostructures with thick LAO layers strongly depends on laser fluence. Our experimental results provide fundamental insights into the different roles played by oxygen vacancies and polarization catastrophe in the two-dimensional electron gas in crystalline LAO/STO heterostructures.

AB - We report that in unannealed LaAlO3/SrTiO3 (LAO/STO) heterostructures the critical thickness for the appearance of the two-dimensional electron gas can be less than 4 unit cell, the interface is conducting even for STO substrates with mixed terminations and the low-temperature resistance upturn in LAO/STO heterostructures with thick LAO layers strongly depends on laser fluence. Our experimental results provide fundamental insights into the different roles played by oxygen vacancies and polarization catastrophe in the two-dimensional electron gas in crystalline LAO/STO heterostructures.

UR - https://www.scopus.com/pages/publications/84906876878

U2 - 10.1063/1.4863800

DO - 10.1063/1.4863800

M3 - 文章

AN - SCOPUS:84906876878

SN - 0021-8979

VL - 115

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

M1 - 054303

ER -

Dominant role of oxygen vacancies in electrical properties of unannealed LaAlO₃/SrTiO₃ interfaces

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