Domain structure and in-plane switching in a highly strained Bi 0.9Sm0.1FeO3 film

Weigang Chen; Wei Ren; Lu You; Yurong Yang; Zuhuang Chen; Yajun Qi; Xi Zou; Junling Wang; Thirumany Sritharan; Ping Yang; L. Bellaiche; Lang Chen

doi:10.1063/1.3664394

Domain structure and in-plane switching in a highly strained Bi _0.9Sm_0.1FeO₃ film

Weigang Chen
, Wei Ren
, Lu You
, Yurong Yang
, Zuhuang Chen
, Yajun Qi
, Xi Zou
, Junling Wang
, Thirumany Sritharan
, Ping Yang
, L. Bellaiche
, Lang Chen^*

^*Corresponding author for this work

Nanyang Technological University
University of Arkansas, Fayetteville
Nanjing University of Aeronautics and Astronautics
National University of Singapore

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

We report the domain structure and ferroelectric properties of a 32 nm-thick Bi_0.9Sm_0.1FeO₃ film epitaxially grown on a LaAlO₃ (LAO) substrate. This film exhibits a monoclinic Mc phase, with its monoclinic distortion and anisotropy of in-plane (IP) lattice parameters being both smaller than those of pure BiFeO₃ (BFO) grown on LaAlO₃. Polarization hysteresis loops measured using a quasi-planar capacitor show an in-plane polarization up to 30 C/cm². Piezoresponse force microcopy demonstrates that a 180 in-plane polarization switching accompanied by a 90 domain wall rotation takes place after electric poling. First-principles calculations suggest the differences between highly strained Sm-substituted and pure BiFeO₃.

Original language	English
Article number	222904
Journal	Applied Physics Letters
Volume	99
Issue number	22
DOIs	https://doi.org/10.1063/1.3664394
State	Published - 28 Nov 2011
Externally published	Yes

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title = "Domain structure and in-plane switching in a highly strained Bi 0.9Sm0.1FeO3 film",

abstract = "We report the domain structure and ferroelectric properties of a 32 nm-thick Bi0.9Sm0.1FeO3 film epitaxially grown on a LaAlO3 (LAO) substrate. This film exhibits a monoclinic Mc phase, with its monoclinic distortion and anisotropy of in-plane (IP) lattice parameters being both smaller than those of pure BiFeO3 (BFO) grown on LaAlO3. Polarization hysteresis loops measured using a quasi-planar capacitor show an in-plane polarization up to 30 C/cm2. Piezoresponse force microcopy demonstrates that a 180 in-plane polarization switching accompanied by a 90 domain wall rotation takes place after electric poling. First-principles calculations suggest the differences between highly strained Sm-substituted and pure BiFeO3.",

author = "Weigang Chen and Wei Ren and Lu You and Yurong Yang and Zuhuang Chen and Yajun Qi and Xi Zou and Junling Wang and Thirumany Sritharan and Ping Yang and L. Bellaiche and Lang Chen",

year = "2011",

month = nov,

day = "28",

doi = "10.1063/1.3664394",

language = "英语",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Domain structure and in-plane switching in a highly strained Bi 0.9Sm0.1FeO3 film

AU - Chen, Weigang

AU - Ren, Wei

AU - You, Lu

AU - Yang, Yurong

AU - Chen, Zuhuang

AU - Qi, Yajun

AU - Zou, Xi

AU - Wang, Junling

AU - Sritharan, Thirumany

AU - Yang, Ping

AU - Bellaiche, L.

AU - Chen, Lang

PY - 2011/11/28

Y1 - 2011/11/28

N2 - We report the domain structure and ferroelectric properties of a 32 nm-thick Bi0.9Sm0.1FeO3 film epitaxially grown on a LaAlO3 (LAO) substrate. This film exhibits a monoclinic Mc phase, with its monoclinic distortion and anisotropy of in-plane (IP) lattice parameters being both smaller than those of pure BiFeO3 (BFO) grown on LaAlO3. Polarization hysteresis loops measured using a quasi-planar capacitor show an in-plane polarization up to 30 C/cm2. Piezoresponse force microcopy demonstrates that a 180 in-plane polarization switching accompanied by a 90 domain wall rotation takes place after electric poling. First-principles calculations suggest the differences between highly strained Sm-substituted and pure BiFeO3.

AB - We report the domain structure and ferroelectric properties of a 32 nm-thick Bi0.9Sm0.1FeO3 film epitaxially grown on a LaAlO3 (LAO) substrate. This film exhibits a monoclinic Mc phase, with its monoclinic distortion and anisotropy of in-plane (IP) lattice parameters being both smaller than those of pure BiFeO3 (BFO) grown on LaAlO3. Polarization hysteresis loops measured using a quasi-planar capacitor show an in-plane polarization up to 30 C/cm2. Piezoresponse force microcopy demonstrates that a 180 in-plane polarization switching accompanied by a 90 domain wall rotation takes place after electric poling. First-principles calculations suggest the differences between highly strained Sm-substituted and pure BiFeO3.

UR - https://www.scopus.com/pages/publications/82955194694

U2 - 10.1063/1.3664394

DO - 10.1063/1.3664394

M3 - 文章

AN - SCOPUS:82955194694

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 222904

ER -

Domain structure and in-plane switching in a highly strained Bi _0.9Sm_0.1FeO₃ film

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