Displacement damage on P-channel VDMOS caused by different energy protons

In this paper, characteristics of displacement and ionization damage on P-channel VDMOS (Vertical double-diffused Metal Oxide Semiconductor) deceives caused by 3 MeV and 6 MeV protons were investigated. The key electrical parameters such as threshold voltage and leakage current are measured. Experimental results show that threshold voltage move to left shift and the leakage current increases. The electrical properties measurement is performed in-situ by 3 MeV and 6 MeV protons, and the changes of electrical properties are different. The shift of threshold voltage is higher for the 6 MeV protons than for the 3 MeV ones. The leakage current is higher after the irradiation by 3 MeV protons than it by the 6 MeV ones. Annealing at room temperature for 300 days leads to an obvious decrease in the shift of threshold voltage, and has a little effect on leakage current. The increase in leakage current is mainly caused by displacement and the ionization damage mainly changes the shift of threshold voltage.