Displacement Damage Correlation of Heavy Ion, Proton, and Electron Irradiation in GaAs MESFETs

Shuhao Hou; Shangli Dong; Jianqun Yang; Zhongli Liu; Enhao Guan; Gang Lin; Guojian Shao; Yubao Zhang; Jicheng Jiang; Xingji Li

doi:10.1109/TNS.2025.3543451

Displacement Damage Correlation of Heavy Ion, Proton, and Electron Irradiation in GaAs MESFETs

Shuhao Hou
, Shangli Dong
, Jianqun Yang
, Zhongli Liu
, Enhao Guan
, Gang Lin
, Guojian Shao
, Yubao Zhang
, Jicheng Jiang
, Xingji Li^*

^*Corresponding author for this work

Harbin Institute of Technology
Sanan Semiconductor Company Ltd.
Nanjing Electronic Devices Institute
Accelerator Center

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

In this article, we mainly report the radiation response of n-channel depletion-mode gallium arsenide (GaAs) metal-semiconductor field-effect transistors (MESFETs) under heavy ion, proton, and electron irradiation. The maximum transconductance (G_MAX ) and drain saturation current (I_DSS ), which can reflect the carrier removal and mobility degradation induced by displacement damage, are selected as evaluation indicators, and two kinds of damage factors are derived: K_G and K_I. The nonionizing energy loss (NIEL) of different particles deposited in the epitaxial channel layer of GaAs MESFETs is calculated and used to correlate K_G and K_I , respectively. The good linear relationship between damage factors and NIEL makes it possible to predict the degradation of G_MAX and I_DSS. On this basis, two semiempirical damage equations describing GaAs MESFETs displacement damage are derived and verified by 27-MeV F. We also derive the damage coefficient "γ "in the more general damage equation, which has a value of 5.5× 10^-13 g/MeV for G_MAX and 8.9× 10^-13 g/MeV for I_DSS. Besides, MESFETs made from other materials may also align with the damage equation. A single irradiation experiment can determine the damage coefficient γ values in principle. This work extends the application of the NIEL-based displacement damage dose (DDD) method in GaAs MESFETs.

Original language	English
Pages (from-to)	858-865
Number of pages	8
Journal	IEEE Transactions on Nuclear Science
Volume	72
Issue number	3
DOIs	https://doi.org/10.1109/TNS.2025.3543451
State	Published - 2025
Externally published	Yes

Keywords

Damage factor
displacement damage
electrons
gallium arsenide (GaAs)
heavy ions
metal-semiconductor field-effect transistors (MESFETs)
nonionizing energy loss (NIEL) scaling
protons

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10.1109/TNS.2025.3543451

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@article{fd48bf2f01be4ecdbce7bd7de2a94d15,

title = "Displacement Damage Correlation of Heavy Ion, Proton, and Electron Irradiation in GaAs MESFETs",

abstract = "In this article, we mainly report the radiation response of n-channel depletion-mode gallium arsenide (GaAs) metal-semiconductor field-effect transistors (MESFETs) under heavy ion, proton, and electron irradiation. The maximum transconductance (GMAX ) and drain saturation current (IDSS ), which can reflect the carrier removal and mobility degradation induced by displacement damage, are selected as evaluation indicators, and two kinds of damage factors are derived: KG and KI. The nonionizing energy loss (NIEL) of different particles deposited in the epitaxial channel layer of GaAs MESFETs is calculated and used to correlate KG and KI , respectively. The good linear relationship between damage factors and NIEL makes it possible to predict the degradation of GMAX and IDSS. On this basis, two semiempirical damage equations describing GaAs MESFETs displacement damage are derived and verified by 27-MeV F. We also derive the damage coefficient {"}γ {"}in the more general damage equation, which has a value of 5.5{\texttimes} 10-13 g/MeV for GMAX and 8.9{\texttimes} 10-13 g/MeV for IDSS. Besides, MESFETs made from other materials may also align with the damage equation. A single irradiation experiment can determine the damage coefficient γ values in principle. This work extends the application of the NIEL-based displacement damage dose (DDD) method in GaAs MESFETs.",

keywords = "Damage factor, displacement damage, electrons, gallium arsenide (GaAs), heavy ions, metal-semiconductor field-effect transistors (MESFETs), nonionizing energy loss (NIEL) scaling, protons",

author = "Shuhao Hou and Shangli Dong and Jianqun Yang and Zhongli Liu and Enhao Guan and Gang Lin and Guojian Shao and Yubao Zhang and Jicheng Jiang and Xingji Li",

note = "Publisher Copyright: {\textcopyright} 2025 IEEE.",

year = "2025",

doi = "10.1109/TNS.2025.3543451",

language = "英语",

volume = "72",

pages = "858--865",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - Displacement Damage Correlation of Heavy Ion, Proton, and Electron Irradiation in GaAs MESFETs

AU - Hou, Shuhao

AU - Dong, Shangli

AU - Yang, Jianqun

AU - Liu, Zhongli

AU - Guan, Enhao

AU - Lin, Gang

AU - Shao, Guojian

AU - Zhang, Yubao

AU - Jiang, Jicheng

AU - Li, Xingji

PY - 2025

Y1 - 2025

N2 - In this article, we mainly report the radiation response of n-channel depletion-mode gallium arsenide (GaAs) metal-semiconductor field-effect transistors (MESFETs) under heavy ion, proton, and electron irradiation. The maximum transconductance (GMAX ) and drain saturation current (IDSS ), which can reflect the carrier removal and mobility degradation induced by displacement damage, are selected as evaluation indicators, and two kinds of damage factors are derived: KG and KI. The nonionizing energy loss (NIEL) of different particles deposited in the epitaxial channel layer of GaAs MESFETs is calculated and used to correlate KG and KI , respectively. The good linear relationship between damage factors and NIEL makes it possible to predict the degradation of GMAX and IDSS. On this basis, two semiempirical damage equations describing GaAs MESFETs displacement damage are derived and verified by 27-MeV F. We also derive the damage coefficient "γ "in the more general damage equation, which has a value of 5.5× 10-13 g/MeV for GMAX and 8.9× 10-13 g/MeV for IDSS. Besides, MESFETs made from other materials may also align with the damage equation. A single irradiation experiment can determine the damage coefficient γ values in principle. This work extends the application of the NIEL-based displacement damage dose (DDD) method in GaAs MESFETs.

AB - In this article, we mainly report the radiation response of n-channel depletion-mode gallium arsenide (GaAs) metal-semiconductor field-effect transistors (MESFETs) under heavy ion, proton, and electron irradiation. The maximum transconductance (GMAX ) and drain saturation current (IDSS ), which can reflect the carrier removal and mobility degradation induced by displacement damage, are selected as evaluation indicators, and two kinds of damage factors are derived: KG and KI. The nonionizing energy loss (NIEL) of different particles deposited in the epitaxial channel layer of GaAs MESFETs is calculated and used to correlate KG and KI , respectively. The good linear relationship between damage factors and NIEL makes it possible to predict the degradation of GMAX and IDSS. On this basis, two semiempirical damage equations describing GaAs MESFETs displacement damage are derived and verified by 27-MeV F. We also derive the damage coefficient "γ "in the more general damage equation, which has a value of 5.5× 10-13 g/MeV for GMAX and 8.9× 10-13 g/MeV for IDSS. Besides, MESFETs made from other materials may also align with the damage equation. A single irradiation experiment can determine the damage coefficient γ values in principle. This work extends the application of the NIEL-based displacement damage dose (DDD) method in GaAs MESFETs.

KW - Damage factor

KW - displacement damage

KW - electrons

KW - gallium arsenide (GaAs)

KW - heavy ions

KW - metal-semiconductor field-effect transistors (MESFETs)

KW - nonionizing energy loss (NIEL) scaling

KW - protons

UR - https://www.scopus.com/pages/publications/105001072161

U2 - 10.1109/TNS.2025.3543451

DO - 10.1109/TNS.2025.3543451

M3 - 文章

AN - SCOPUS:105001072161

SN - 0018-9499

VL - 72

SP - 858

EP - 865

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 3

ER -

Displacement Damage Correlation of Heavy Ion, Proton, and Electron Irradiation in GaAs MESFETs

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