Direct soldering of screen-printed Al-paste layer on back-side of silicon solar cell using SnAg solder

Weibing Guo; Xinran Ma; Mingze Gao; Jiuchun Yan

doi:10.1016/j.matlet.2018.07.127

Direct soldering of screen-printed Al-paste layer on back-side of silicon solar cell using SnAg solder

Weibing Guo
, Xinran Ma
, Mingze Gao
, Jiuchun Yan^*

^*Corresponding author for this work

School of Materials Science and Engineering

Harbin Institute of Technology
Hebei University of Technology

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Direct joining of Al back surface field (Al BSF) in a polycrystalline silicon solar cell using a green Sn-3.5Ag solder by the assistance of ultrasound was investigated. SEM, peel force, electrical resistance and open-circuit voltage (V_oc) tests were used to study the effect of ultrasonic action time on the performance of the solar cell. The results show that with the increasing of ultrasonic action time, more Al particles in the paste residual layer dissolved into the solder layer. The dissolved Al existed in the bond metal as forms of α-Al and Ag-Al compound phases. The solder bonded directly with the Al-Si eutectic layer under ultrasonic action time of 6 s. The resistance of the joints was 1.27 mΩ and the peel force could reach as high as ∼1.44 N/mm. The V_oc of solar cell was 524 mV, which was higher than the 467 mV of solar cell soldered with Ag electrode.

Original language	English
Pages (from-to)	146-149
Number of pages	4
Journal	Materials Letters
Volume	231
DOIs	https://doi.org/10.1016/j.matlet.2018.07.127
State	Published - 15 Nov 2018

Keywords

Electrical properties
Microstructure
Sn-Ag solders
Solar energy materials
Ultrasonic-assisted soldering

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10.1016/j.matlet.2018.07.127

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@article{f5de9ea7922243db91fd9257bde0871e,

title = "Direct soldering of screen-printed Al-paste layer on back-side of silicon solar cell using SnAg solder",

abstract = "Direct joining of Al back surface field (Al BSF) in a polycrystalline silicon solar cell using a green Sn-3.5Ag solder by the assistance of ultrasound was investigated. SEM, peel force, electrical resistance and open-circuit voltage (Voc) tests were used to study the effect of ultrasonic action time on the performance of the solar cell. The results show that with the increasing of ultrasonic action time, more Al particles in the paste residual layer dissolved into the solder layer. The dissolved Al existed in the bond metal as forms of α-Al and Ag-Al compound phases. The solder bonded directly with the Al-Si eutectic layer under ultrasonic action time of 6 s. The resistance of the joints was 1.27 mΩ and the peel force could reach as high as ∼1.44 N/mm. The Voc of solar cell was 524 mV, which was higher than the 467 mV of solar cell soldered with Ag electrode.",

keywords = "Electrical properties, Microstructure, Sn-Ag solders, Solar energy materials, Ultrasonic-assisted soldering",

author = "Weibing Guo and Xinran Ma and Mingze Gao and Jiuchun Yan",

note = "Publisher Copyright: {\textcopyright} 2018 Elsevier B.V.",

year = "2018",

month = nov,

day = "15",

doi = "10.1016/j.matlet.2018.07.127",

language = "英语",

volume = "231",

pages = "146--149",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Direct soldering of screen-printed Al-paste layer on back-side of silicon solar cell using SnAg solder

AU - Guo, Weibing

AU - Ma, Xinran

AU - Gao, Mingze

AU - Yan, Jiuchun

PY - 2018/11/15

Y1 - 2018/11/15

N2 - Direct joining of Al back surface field (Al BSF) in a polycrystalline silicon solar cell using a green Sn-3.5Ag solder by the assistance of ultrasound was investigated. SEM, peel force, electrical resistance and open-circuit voltage (Voc) tests were used to study the effect of ultrasonic action time on the performance of the solar cell. The results show that with the increasing of ultrasonic action time, more Al particles in the paste residual layer dissolved into the solder layer. The dissolved Al existed in the bond metal as forms of α-Al and Ag-Al compound phases. The solder bonded directly with the Al-Si eutectic layer under ultrasonic action time of 6 s. The resistance of the joints was 1.27 mΩ and the peel force could reach as high as ∼1.44 N/mm. The Voc of solar cell was 524 mV, which was higher than the 467 mV of solar cell soldered with Ag electrode.

AB - Direct joining of Al back surface field (Al BSF) in a polycrystalline silicon solar cell using a green Sn-3.5Ag solder by the assistance of ultrasound was investigated. SEM, peel force, electrical resistance and open-circuit voltage (Voc) tests were used to study the effect of ultrasonic action time on the performance of the solar cell. The results show that with the increasing of ultrasonic action time, more Al particles in the paste residual layer dissolved into the solder layer. The dissolved Al existed in the bond metal as forms of α-Al and Ag-Al compound phases. The solder bonded directly with the Al-Si eutectic layer under ultrasonic action time of 6 s. The resistance of the joints was 1.27 mΩ and the peel force could reach as high as ∼1.44 N/mm. The Voc of solar cell was 524 mV, which was higher than the 467 mV of solar cell soldered with Ag electrode.

KW - Electrical properties

KW - Microstructure

KW - Sn-Ag solders

KW - Solar energy materials

KW - Ultrasonic-assisted soldering

UR - https://www.scopus.com/pages/publications/85051403279

U2 - 10.1016/j.matlet.2018.07.127

DO - 10.1016/j.matlet.2018.07.127

M3 - 文章

AN - SCOPUS:85051403279

SN - 0167-577X

VL - 231

SP - 146

EP - 149

JO - Materials Letters

JF - Materials Letters

ER -

Direct soldering of screen-printed Al-paste layer on back-side of silicon solar cell using SnAg solder

Abstract

Keywords

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