Direct bonding of high dielectric oxides for high-performance transistor applications

Jikai Xu; Chenxi Wang; Xiaoliang Ji; Qi An; Yanhong Tian; Tadatomo Suga

doi:10.1016/j.scriptamat.2019.11.055

Direct bonding of high dielectric oxides for high-performance transistor applications

Jikai Xu
, Chenxi Wang^*
, Xiaoliang Ji
, Qi An
, Yanhong Tian
, Tadatomo Suga

^*Corresponding author for this work

School of Materials Science and Engineering

Harbin Institute of Technology
Meisei University
The University of Tokyo

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

We developed a plasma activation process using a gas mixture of O₂/NH₃/H₂O for direct bonding, which realized the combination of bulk aluminum oxide (Al₂O₃) and yttria-stabilized cubic zirconia (YSZ) without interlayers for the first time. The bonding could withstand multiple mechanical grinding and polishing processes and exhibited sufficient bonding strength for device micro/nanofabication. A nanoscale, sharp, and layered crystalline bonding interface with fewer grain boundaries was confirmed by transmission electron microscopy. The interfacial structure is well-suited for superior performance in high dielectric constant metal–oxide–semiconductor field-effect transistors. Moreover, this bonding method is universal for the fabrication of Al₂O₃/SiO₂ and YSZ/SiO₂ heterostructures.

Original language	English
Pages (from-to)	307-312
Number of pages	6
Journal	Scripta Materialia
Volume	178
DOIs	https://doi.org/10.1016/j.scriptamat.2019.11.055
State	Published - 15 Mar 2020

Keywords

Al/YSZ heterostructure
Direct bonding
Interface

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10.1016/j.scriptamat.2019.11.055

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title = "Direct bonding of high dielectric oxides for high-performance transistor applications",

abstract = "We developed a plasma activation process using a gas mixture of O2/NH3/H2O for direct bonding, which realized the combination of bulk aluminum oxide (Al2O3) and yttria-stabilized cubic zirconia (YSZ) without interlayers for the first time. The bonding could withstand multiple mechanical grinding and polishing processes and exhibited sufficient bonding strength for device micro/nanofabication. A nanoscale, sharp, and layered crystalline bonding interface with fewer grain boundaries was confirmed by transmission electron microscopy. The interfacial structure is well-suited for superior performance in high dielectric constant metal–oxide–semiconductor field-effect transistors. Moreover, this bonding method is universal for the fabrication of Al2O3/SiO2 and YSZ/SiO2 heterostructures.",

keywords = "Al/YSZ heterostructure, Direct bonding, Interface",

author = "Jikai Xu and Chenxi Wang and Xiaoliang Ji and Qi An and Yanhong Tian and Tadatomo Suga",

note = "Publisher Copyright: {\textcopyright} 2019",

year = "2020",

month = mar,

day = "15",

doi = "10.1016/j.scriptamat.2019.11.055",

language = "英语",

volume = "178",

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journal = "Scripta Materialia",

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TY - JOUR

T1 - Direct bonding of high dielectric oxides for high-performance transistor applications

AU - Xu, Jikai

AU - Wang, Chenxi

AU - Ji, Xiaoliang

AU - An, Qi

AU - Tian, Yanhong

AU - Suga, Tadatomo

PY - 2020/3/15

Y1 - 2020/3/15

N2 - We developed a plasma activation process using a gas mixture of O2/NH3/H2O for direct bonding, which realized the combination of bulk aluminum oxide (Al2O3) and yttria-stabilized cubic zirconia (YSZ) without interlayers for the first time. The bonding could withstand multiple mechanical grinding and polishing processes and exhibited sufficient bonding strength for device micro/nanofabication. A nanoscale, sharp, and layered crystalline bonding interface with fewer grain boundaries was confirmed by transmission electron microscopy. The interfacial structure is well-suited for superior performance in high dielectric constant metal–oxide–semiconductor field-effect transistors. Moreover, this bonding method is universal for the fabrication of Al2O3/SiO2 and YSZ/SiO2 heterostructures.

AB - We developed a plasma activation process using a gas mixture of O2/NH3/H2O for direct bonding, which realized the combination of bulk aluminum oxide (Al2O3) and yttria-stabilized cubic zirconia (YSZ) without interlayers for the first time. The bonding could withstand multiple mechanical grinding and polishing processes and exhibited sufficient bonding strength for device micro/nanofabication. A nanoscale, sharp, and layered crystalline bonding interface with fewer grain boundaries was confirmed by transmission electron microscopy. The interfacial structure is well-suited for superior performance in high dielectric constant metal–oxide–semiconductor field-effect transistors. Moreover, this bonding method is universal for the fabrication of Al2O3/SiO2 and YSZ/SiO2 heterostructures.

KW - Al/YSZ heterostructure

KW - Direct bonding

KW - Interface

UR - https://www.scopus.com/pages/publications/85075819214

U2 - 10.1016/j.scriptamat.2019.11.055

DO - 10.1016/j.scriptamat.2019.11.055

M3 - 文章

AN - SCOPUS:85075819214

SN - 1359-6462

VL - 178

SP - 307

EP - 312

JO - Scripta Materialia

JF - Scripta Materialia

ER -

Direct bonding of high dielectric oxides for high-performance transistor applications

Abstract

Keywords

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