Diode-pumped room temperature single longitudinal mode lasing of Tm,Ho:YLF microchip laser at 2050.5 μm

P. B. Meng; B. Q. Yao; R. L. Zhou; F. Chen; Y. L. Ju; Y. Z. Wang

doi:10.1134/S1054660X11070243

Diode-pumped room temperature single longitudinal mode lasing of Tm,Ho:YLF microchip laser at 2050.5 μm

P. B. Meng
, B. Q. Yao
, R. L. Zhou
, F. Chen
, Y. L. Ju
, Y. Z. Wang

School of Astronautics

Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Room-temperature operation of a single longitudinal-mode c-cut Tm(6%), Ho(0.4%):YLF microchip laser is reported. An incident pump power of 713 mW is used to generate the maximum single-frequency output power of 17 mW at 2050.5 nm, which corresponds to the slope efficiency of 10%.

Original language	English
Pages (from-to)	643-647
Number of pages	5
Journal	Laser Physics
Volume	21
Issue number	4
DOIs	https://doi.org/10.1134/S1054660X11070243
State	Published - Apr 2011

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title = "Diode-pumped room temperature single longitudinal mode lasing of Tm,Ho:YLF microchip laser at 2050.5 μm",

abstract = "Room-temperature operation of a single longitudinal-mode c-cut Tm(6\%), Ho(0.4\%):YLF microchip laser is reported. An incident pump power of 713 mW is used to generate the maximum single-frequency output power of 17 mW at 2050.5 nm, which corresponds to the slope efficiency of 10\%.",

author = "Meng, \{P. B.\} and Yao, \{B. Q.\} and Zhou, \{R. L.\} and F. Chen and Ju, \{Y. L.\} and Wang, \{Y. Z.\}",

year = "2011",

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doi = "10.1134/S1054660X11070243",

language = "英语",

volume = "21",

pages = "643--647",

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T1 - Diode-pumped room temperature single longitudinal mode lasing of Tm,Ho:YLF microchip laser at 2050.5 μm

AU - Meng, P. B.

AU - Yao, B. Q.

AU - Zhou, R. L.

AU - Chen, F.

AU - Ju, Y. L.

AU - Wang, Y. Z.

PY - 2011/4

Y1 - 2011/4

N2 - Room-temperature operation of a single longitudinal-mode c-cut Tm(6%), Ho(0.4%):YLF microchip laser is reported. An incident pump power of 713 mW is used to generate the maximum single-frequency output power of 17 mW at 2050.5 nm, which corresponds to the slope efficiency of 10%.

AB - Room-temperature operation of a single longitudinal-mode c-cut Tm(6%), Ho(0.4%):YLF microchip laser is reported. An incident pump power of 713 mW is used to generate the maximum single-frequency output power of 17 mW at 2050.5 nm, which corresponds to the slope efficiency of 10%.

UR - https://www.scopus.com/pages/publications/79955897280

U2 - 10.1134/S1054660X11070243

DO - 10.1134/S1054660X11070243

M3 - 文章

AN - SCOPUS:79955897280

SN - 1054-660X

VL - 21

SP - 643

EP - 647

JO - Laser Physics

JF - Laser Physics

IS - 4

ER -

Diode-pumped room temperature single longitudinal mode lasing of Tm,Ho:YLF microchip laser at 2050.5 μm

Abstract

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