Diode-pumped Q-switched Nd:YVO 4 laser with a low-temperature-grown GaAs saturable absorber

Yu Gan; Wanghua Xiang; Zhigang Zhang; Yonggang Wang; Qichang Jiang; Zhuang Zhuo

doi:10.1117/12.693399

Diode-pumped Q-switched Nd:YVO ₄ laser with a low-temperature-grown GaAs saturable absorber

Yu Gan^*
, Wanghua Xiang
, Zhigang Zhang
, Yonggang Wang
, Qichang Jiang
, Zhuang Zhuo

^*Corresponding author for this work

Tianjin University
Shandong Normal University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A stable passively Q-switched Nd: YVO ₄ laser was demonstrated by use of a GaAs absorber grown at a low temperature (LT GaAs absorber) by the Metal Organic Chemical Vapor Deposition (MOCVD) technique, as well as an output coupler. The shortest pulse duration measured was about 12 ns with a single-pulse energy of 4.84 μJ, and the highest average output power is 1.16 W. The repetition rate is 360 KHz, which corresponds to the pump power of 2.8W.

Original language	English
Title of host publication	Advanced Laser Technologies 2005
DOIs	https://doi.org/10.1117/12.693399
State	Published - 2006
Externally published	Yes
Event	Advanced Laser Technologies 2005 - Tianjin, China Duration: 3 Sep 2005 → 6 Sep 2005

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	6344 I
ISSN (Print)	0277-786X

Conference

Conference	Advanced Laser Technologies 2005
Country/Territory	China
City	Tianjin
Period	3/09/05 → 6/09/05

Keywords

LT GaAs absorber
Laser
Nd: YVO
Q-switched

Access to Document

10.1117/12.693399

Cite this

@inproceedings{7625383fb1ff4ca381f7827ce341a653,

title = "Diode-pumped Q-switched Nd:YVO 4 laser with a low-temperature-grown GaAs saturable absorber",

abstract = "A stable passively Q-switched Nd: YVO 4 laser was demonstrated by use of a GaAs absorber grown at a low temperature (LT GaAs absorber) by the Metal Organic Chemical Vapor Deposition (MOCVD) technique, as well as an output coupler. The shortest pulse duration measured was about 12 ns with a single-pulse energy of 4.84 μJ, and the highest average output power is 1.16 W. The repetition rate is 360 KHz, which corresponds to the pump power of 2.8W.",

keywords = "LT GaAs absorber, Laser, Nd: YVO, Q-switched",

author = "Yu Gan and Wanghua Xiang and Zhigang Zhang and Yonggang Wang and Qichang Jiang and Zhuang Zhuo",

year = "2006",

doi = "10.1117/12.693399",

language = "英语",

isbn = "0819464201",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Advanced Laser Technologies 2005",

note = "Advanced Laser Technologies 2005 ; Conference date: 03-09-2005 Through 06-09-2005",

}

Gan, Y, Xiang, W, Zhang, Z, Wang, Y, Jiang, Q & Zhuo, Z 2006, Diode-pumped Q-switched Nd:YVO ₄ laser with a low-temperature-grown GaAs saturable absorber. in Advanced Laser Technologies 2005., 63440D, Proceedings of SPIE - The International Society for Optical Engineering, vol. 6344 I, Advanced Laser Technologies 2005, Tianjin, China, 3/09/05. https://doi.org/10.1117/12.693399

Diode-pumped Q-switched Nd:YVO ₄ laser with a low-temperature-grown GaAs saturable absorber. / Gan, Yu; Xiang, Wanghua; Zhang, Zhigang et al.
Advanced Laser Technologies 2005. 2006. 63440D (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6344 I).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Diode-pumped Q-switched Nd:YVO 4 laser with a low-temperature-grown GaAs saturable absorber

AU - Gan, Yu

AU - Xiang, Wanghua

AU - Zhang, Zhigang

AU - Wang, Yonggang

AU - Jiang, Qichang

AU - Zhuo, Zhuang

PY - 2006

Y1 - 2006

N2 - A stable passively Q-switched Nd: YVO 4 laser was demonstrated by use of a GaAs absorber grown at a low temperature (LT GaAs absorber) by the Metal Organic Chemical Vapor Deposition (MOCVD) technique, as well as an output coupler. The shortest pulse duration measured was about 12 ns with a single-pulse energy of 4.84 μJ, and the highest average output power is 1.16 W. The repetition rate is 360 KHz, which corresponds to the pump power of 2.8W.

AB - A stable passively Q-switched Nd: YVO 4 laser was demonstrated by use of a GaAs absorber grown at a low temperature (LT GaAs absorber) by the Metal Organic Chemical Vapor Deposition (MOCVD) technique, as well as an output coupler. The shortest pulse duration measured was about 12 ns with a single-pulse energy of 4.84 μJ, and the highest average output power is 1.16 W. The repetition rate is 360 KHz, which corresponds to the pump power of 2.8W.

KW - LT GaAs absorber

KW - Laser

KW - Nd: YVO

KW - Q-switched

UR - https://www.scopus.com/pages/publications/33748691469

U2 - 10.1117/12.693399

DO - 10.1117/12.693399

M3 - 会议稿件

AN - SCOPUS:33748691469

SN - 0819464201

SN - 9780819464200

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Advanced Laser Technologies 2005

T2 - Advanced Laser Technologies 2005

Y2 - 3 September 2005 through 6 September 2005

ER -