Diode-end-pumped Tm:Ho:GdVO4 microchip laser at room temperature

Bao Quan Yao; Fang Chen; Qiang Wang; Chun Ting Wu; Gang Li; Chao Hui Zhang; Yue Zhu Wang; You Lun Ju

doi:10.1088/0256-307X/28/2/024210

Diode-end-pumped Tm:Ho:GdVO₄ microchip laser at room temperature

Bao Quan Yao^*
, Fang Chen
, Qiang Wang
, Chun Ting Wu
, Gang Li
, Chao Hui Zhang
, Yue Zhu Wang
, You Lun Ju

^*Corresponding author for this work

School of Astronautics

Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Room-temperature Tm:Ho:GdVO₄ microchip laser operated around 2 μm is demonstrated for the first time to our knowledge. At a heat sink temperature of 283 K, maximum output power of 29.7 mW is obtained by using a 0.25-mm-long crystal at an absorbed pump power of 912 mW, corresponding to a slope efficiency of 5.0%. At the temperature to 283 K, a single-longitudinal- mode laser as much as 8mW at 2048.5 nm is achieved. The M ² factor is measured to be 1.4.

Original language	English
Article number	024210
Journal	Chinese Physics Letters
Volume	28
Issue number	2
DOIs	https://doi.org/10.1088/0256-307X/28/2/024210
State	Published - Feb 2011

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title = "Diode-end-pumped Tm:Ho:GdVO4 microchip laser at room temperature",

abstract = "Room-temperature Tm:Ho:GdVO4 microchip laser operated around 2 μm is demonstrated for the first time to our knowledge. At a heat sink temperature of 283 K, maximum output power of 29.7 mW is obtained by using a 0.25-mm-long crystal at an absorbed pump power of 912 mW, corresponding to a slope efficiency of 5.0\%. At the temperature to 283 K, a single-longitudinal- mode laser as much as 8mW at 2048.5 nm is achieved. The M 2 factor is measured to be 1.4.",

author = "Yao, \{Bao Quan\} and Fang Chen and Qiang Wang and Wu, \{Chun Ting\} and Gang Li and Zhang, \{Chao Hui\} and Wang, \{Yue Zhu\} and Ju, \{You Lun\}",

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month = feb,

doi = "10.1088/0256-307X/28/2/024210",

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T1 - Diode-end-pumped Tm:Ho:GdVO4 microchip laser at room temperature

AU - Yao, Bao Quan

AU - Chen, Fang

AU - Wang, Qiang

AU - Wu, Chun Ting

AU - Li, Gang

AU - Zhang, Chao Hui

AU - Wang, Yue Zhu

AU - Ju, You Lun

PY - 2011/2

Y1 - 2011/2

N2 - Room-temperature Tm:Ho:GdVO4 microchip laser operated around 2 μm is demonstrated for the first time to our knowledge. At a heat sink temperature of 283 K, maximum output power of 29.7 mW is obtained by using a 0.25-mm-long crystal at an absorbed pump power of 912 mW, corresponding to a slope efficiency of 5.0%. At the temperature to 283 K, a single-longitudinal- mode laser as much as 8mW at 2048.5 nm is achieved. The M 2 factor is measured to be 1.4.

AB - Room-temperature Tm:Ho:GdVO4 microchip laser operated around 2 μm is demonstrated for the first time to our knowledge. At a heat sink temperature of 283 K, maximum output power of 29.7 mW is obtained by using a 0.25-mm-long crystal at an absorbed pump power of 912 mW, corresponding to a slope efficiency of 5.0%. At the temperature to 283 K, a single-longitudinal- mode laser as much as 8mW at 2048.5 nm is achieved. The M 2 factor is measured to be 1.4.

UR - https://www.scopus.com/pages/publications/79952474339

U2 - 10.1088/0256-307X/28/2/024210

DO - 10.1088/0256-307X/28/2/024210

M3 - 文章

AN - SCOPUS:79952474339

SN - 0256-307X

VL - 28

JO - Chinese Physics Letters

JF - Chinese Physics Letters

IS - 2

M1 - 024210

ER -

Diode-end-pumped Tm:Ho:GdVO₄ microchip laser at room temperature

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