Diode-end-pumped Tm, Ho:YVO4 microchip laser at room temperature

B. Q. Yao; F. Chen; C. T. Wu; Q. Wang; G. Li; C. H. Zhang; Y. Z. Wang; Y. L. Ju

doi:10.1134/S1054660X11070346

Diode-end-pumped Tm, Ho:YVO₄ microchip laser at room temperature

B. Q. Yao
, F. Chen
, C. T. Wu
, Q. Wang
, G. Li
, C. H. Zhang
, Y. Z. Wang
, Y. L. Ju

School of Astronautics

Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Room temperature Tm, Ho:YVO₄ microchip laser operated around 2 μm was demonstrated for the first time to our knowledge. At a heat sink temperature of 283 K, a maximum output power of 47 mW was obtained by using a 0.25 mm length crystal at an absorbed pump power of 912 mW, corresponding to a slope efficiency of 9.1%. Increasing the temperature to 288 K, as much as 16.5 mW 2052.3 nm single-longitudinal-mode laser was achieved. The M ² factor was measured to be 1.4.

Original language	English
Pages (from-to)	663-666
Number of pages	4
Journal	Laser Physics
Volume	21
Issue number	4
DOIs	https://doi.org/10.1134/S1054660X11070346
State	Published - Apr 2011

Access to Document

10.1134/S1054660X11070346

Cite this

@article{8a879e6c53664832993d263c5a60906c,

title = "Diode-end-pumped Tm, Ho:YVO4 microchip laser at room temperature",

abstract = "Room temperature Tm, Ho:YVO4 microchip laser operated around 2 μm was demonstrated for the first time to our knowledge. At a heat sink temperature of 283 K, a maximum output power of 47 mW was obtained by using a 0.25 mm length crystal at an absorbed pump power of 912 mW, corresponding to a slope efficiency of 9.1\%. Increasing the temperature to 288 K, as much as 16.5 mW 2052.3 nm single-longitudinal-mode laser was achieved. The M 2 factor was measured to be 1.4.",

author = "Yao, \{B. Q.\} and F. Chen and Wu, \{C. T.\} and Q. Wang and G. Li and Zhang, \{C. H.\} and Wang, \{Y. Z.\} and Ju, \{Y. L.\}",

year = "2011",

month = apr,

doi = "10.1134/S1054660X11070346",

language = "英语",

volume = "21",

pages = "663--666",

journal = "Laser Physics",

issn = "1054-660X",

publisher = "Institute of Physics Publishing",

number = "4",

}

TY - JOUR

T1 - Diode-end-pumped Tm, Ho:YVO4 microchip laser at room temperature

AU - Yao, B. Q.

AU - Chen, F.

AU - Wu, C. T.

AU - Wang, Q.

AU - Li, G.

AU - Zhang, C. H.

AU - Wang, Y. Z.

AU - Ju, Y. L.

PY - 2011/4

Y1 - 2011/4

N2 - Room temperature Tm, Ho:YVO4 microchip laser operated around 2 μm was demonstrated for the first time to our knowledge. At a heat sink temperature of 283 K, a maximum output power of 47 mW was obtained by using a 0.25 mm length crystal at an absorbed pump power of 912 mW, corresponding to a slope efficiency of 9.1%. Increasing the temperature to 288 K, as much as 16.5 mW 2052.3 nm single-longitudinal-mode laser was achieved. The M 2 factor was measured to be 1.4.

AB - Room temperature Tm, Ho:YVO4 microchip laser operated around 2 μm was demonstrated for the first time to our knowledge. At a heat sink temperature of 283 K, a maximum output power of 47 mW was obtained by using a 0.25 mm length crystal at an absorbed pump power of 912 mW, corresponding to a slope efficiency of 9.1%. Increasing the temperature to 288 K, as much as 16.5 mW 2052.3 nm single-longitudinal-mode laser was achieved. The M 2 factor was measured to be 1.4.

UR - https://www.scopus.com/pages/publications/79955885622

U2 - 10.1134/S1054660X11070346

DO - 10.1134/S1054660X11070346

M3 - 文章

AN - SCOPUS:79955885622

SN - 1054-660X

VL - 21

SP - 663

EP - 666

JO - Laser Physics

JF - Laser Physics

IS - 4

ER -

Diode-end-pumped Tm, Ho:YVO₄ microchip laser at room temperature

Abstract

Access to Document

Other files and links

Fingerprint

Cite this