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Design of Ultrawideband High-Efficiency GaN-Based Power Amplifiers

  • Yu Chen Wei
  • , Cong Wang*
  • , Ji Hu Li
  • , Jing Yang Gao
  • , Jin Yu Wang
  • , Fan Yi Meng
  • , Fan Yang
  • , Nam Young Kim
  • , Yang Li
  • , Yong Le Wu*
  • , Qun Wu
  • *Corresponding author for this work
  • School of Electronics and Information Engineering, Harbin Institute of Technology
  • Kwangwoon University
  • Shandong University
  • Fudan University
  • Beijing University of Posts and Telecommunications

Research output: Contribution to journalArticlepeer-review

Abstract

This paper provides a comprehensive review of ultra-wideband (UWB) high-efficiency power amplifier (PA) design based on gallium nitride (GaN) technology. It covers key challenges and advancements in three major architectures: reactive matching power amplifiers (RMPAs), distributed power amplifiers (DPAs), and load-modulated balanced amplifiers (LMBAs). The study highlights the trade-offs between bandwidth, efficiency, output power, and gain, which are critical in UWB PA design. Techniques such as reactive impedance matching, load modulation, and continuous-mode operation are discussed in detail, along with innovative methods like the nested-mode PA, sequential load-pull technique, and quasi-MMIC designs. This paper also explores recent developments in DPAs and LMBAs that address limitations in efficiency at power back-off, output power, and gain. Future research directions emphasize miniaturization, integration, and enhanced performance for UWB applications in communication, military, and satellite systems. The insights presented aim to guide researchers in achieving optimal PA designs by balancing conflicting performance metrics.

Original languageEnglish
Pages (from-to)26-48
Number of pages23
JournalIEEE Microwave Magazine
Volume26
Issue number10
DOIs
StatePublished - 2025
Externally publishedYes

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