Design of SiC MOSFET high power density soft-switching inverter using integrated magnetic technique

Lei Wang; Donglai Zhang; Jinpei Duan; Jiannong Li

doi:10.1109/ICIEA.2018.8397682

Design of SiC MOSFET high power density soft-switching inverter using integrated magnetic technique

Lei Wang
, Donglai Zhang^*
, Jinpei Duan
, Jiannong Li

^*Corresponding author for this work

Harbin Institute of Technology Shenzhen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The efficiency and power density of inverter can be significantly enhanced by employing wide band gap semiconductor devices > Soft-switched technology as well as magnetic integration technology. In this paper, first, a magnetically integrated soft-switching inverter topology based on SiC MOSFET is proposed, and the zero voltage turn-off loss of SiC MOSFET is researched emphatically. Then the influence of parasitic capacitance of SiC MOSFET on the realization of zero-voltage switch and the method of extracting equivalent parasitic capacitance are accordingly discussed in detail. The dynamic loss model of inductor magnetic integration is constructed. The SiC MOSFET zero-voltage switching condition is optimized, the voltage and current stress formulas of the device are also corrected, and more efficient circuit design parameters are obtained. Finally, the correctness and feasibility of the theoretical analysis are proved by the experimental prototype.

Original language	English
Title of host publication	Proceedings of the 13th IEEE Conference on Industrial Electronics and Applications, ICIEA 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	18-23
Number of pages	6
ISBN (Electronic)	9781538637579
DOIs	https://doi.org/10.1109/ICIEA.2018.8397682
State	Published - 26 Jun 2018
Externally published	Yes
Event	13th IEEE Conference on Industrial Electronics and Applications, ICIEA 2018 - Wuhan, China Duration: 31 May 2018 → 2 Jun 2018

Publication series

Name	Proceedings of the 13th IEEE Conference on Industrial Electronics and Applications, ICIEA 2018

Conference

Conference	13th IEEE Conference on Industrial Electronics and Applications, ICIEA 2018
Country/Territory	China
City	Wuhan
Period	31/05/18 → 2/06/18

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

SiC MOSFET
loss model
magnetically integrated switching inductance
parasitic capacitance
soft-switching inverter

Access to Document

10.1109/ICIEA.2018.8397682

Cite this

Wang, L., Zhang, D., Duan, J., & Li, J. (2018). Design of SiC MOSFET high power density soft-switching inverter using integrated magnetic technique. In Proceedings of the 13th IEEE Conference on Industrial Electronics and Applications, ICIEA 2018 (pp. 18-23). (Proceedings of the 13th IEEE Conference on Industrial Electronics and Applications, ICIEA 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICIEA.2018.8397682

Wang, Lei ; Zhang, Donglai ; Duan, Jinpei et al. / Design of SiC MOSFET high power density soft-switching inverter using integrated magnetic technique. Proceedings of the 13th IEEE Conference on Industrial Electronics and Applications, ICIEA 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 18-23 (Proceedings of the 13th IEEE Conference on Industrial Electronics and Applications, ICIEA 2018).

@inproceedings{7616ffd527d6434c9f2b15682dc71bdc,

title = "Design of SiC MOSFET high power density soft-switching inverter using integrated magnetic technique",

abstract = "The efficiency and power density of inverter can be significantly enhanced by employing wide band gap semiconductor devices > Soft-switched technology as well as magnetic integration technology. In this paper, first, a magnetically integrated soft-switching inverter topology based on SiC MOSFET is proposed, and the zero voltage turn-off loss of SiC MOSFET is researched emphatically. Then the influence of parasitic capacitance of SiC MOSFET on the realization of zero-voltage switch and the method of extracting equivalent parasitic capacitance are accordingly discussed in detail. The dynamic loss model of inductor magnetic integration is constructed. The SiC MOSFET zero-voltage switching condition is optimized, the voltage and current stress formulas of the device are also corrected, and more efficient circuit design parameters are obtained. Finally, the correctness and feasibility of the theoretical analysis are proved by the experimental prototype.",

keywords = "SiC MOSFET, loss model, magnetically integrated switching inductance, parasitic capacitance, soft-switching inverter",

author = "Lei Wang and Donglai Zhang and Jinpei Duan and Jiannong Li",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 13th IEEE Conference on Industrial Electronics and Applications, ICIEA 2018 ; Conference date: 31-05-2018 Through 02-06-2018",

year = "2018",

month = jun,

day = "26",

doi = "10.1109/ICIEA.2018.8397682",

language = "英语",

series = "Proceedings of the 13th IEEE Conference on Industrial Electronics and Applications, ICIEA 2018",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "18--23",

booktitle = "Proceedings of the 13th IEEE Conference on Industrial Electronics and Applications, ICIEA 2018",

address = "美国",

}

Wang, L, Zhang, D, Duan, J & Li, J 2018, Design of SiC MOSFET high power density soft-switching inverter using integrated magnetic technique. in Proceedings of the 13th IEEE Conference on Industrial Electronics and Applications, ICIEA 2018. Proceedings of the 13th IEEE Conference on Industrial Electronics and Applications, ICIEA 2018, Institute of Electrical and Electronics Engineers Inc., pp. 18-23, 13th IEEE Conference on Industrial Electronics and Applications, ICIEA 2018, Wuhan, China, 31/05/18. https://doi.org/10.1109/ICIEA.2018.8397682

Design of SiC MOSFET high power density soft-switching inverter using integrated magnetic technique. / Wang, Lei; Zhang, Donglai; Duan, Jinpei et al.
Proceedings of the 13th IEEE Conference on Industrial Electronics and Applications, ICIEA 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 18-23 (Proceedings of the 13th IEEE Conference on Industrial Electronics and Applications, ICIEA 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Design of SiC MOSFET high power density soft-switching inverter using integrated magnetic technique

AU - Wang, Lei

AU - Zhang, Donglai

AU - Duan, Jinpei

AU - Li, Jiannong

PY - 2018/6/26

Y1 - 2018/6/26

N2 - The efficiency and power density of inverter can be significantly enhanced by employing wide band gap semiconductor devices > Soft-switched technology as well as magnetic integration technology. In this paper, first, a magnetically integrated soft-switching inverter topology based on SiC MOSFET is proposed, and the zero voltage turn-off loss of SiC MOSFET is researched emphatically. Then the influence of parasitic capacitance of SiC MOSFET on the realization of zero-voltage switch and the method of extracting equivalent parasitic capacitance are accordingly discussed in detail. The dynamic loss model of inductor magnetic integration is constructed. The SiC MOSFET zero-voltage switching condition is optimized, the voltage and current stress formulas of the device are also corrected, and more efficient circuit design parameters are obtained. Finally, the correctness and feasibility of the theoretical analysis are proved by the experimental prototype.

AB - The efficiency and power density of inverter can be significantly enhanced by employing wide band gap semiconductor devices > Soft-switched technology as well as magnetic integration technology. In this paper, first, a magnetically integrated soft-switching inverter topology based on SiC MOSFET is proposed, and the zero voltage turn-off loss of SiC MOSFET is researched emphatically. Then the influence of parasitic capacitance of SiC MOSFET on the realization of zero-voltage switch and the method of extracting equivalent parasitic capacitance are accordingly discussed in detail. The dynamic loss model of inductor magnetic integration is constructed. The SiC MOSFET zero-voltage switching condition is optimized, the voltage and current stress formulas of the device are also corrected, and more efficient circuit design parameters are obtained. Finally, the correctness and feasibility of the theoretical analysis are proved by the experimental prototype.

KW - SiC MOSFET

KW - loss model

KW - magnetically integrated switching inductance

KW - parasitic capacitance

KW - soft-switching inverter

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M3 - 会议稿件

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BT - Proceedings of the 13th IEEE Conference on Industrial Electronics and Applications, ICIEA 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 13th IEEE Conference on Industrial Electronics and Applications, ICIEA 2018

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ER -

Wang L, Zhang D, Duan J, Li J. Design of SiC MOSFET high power density soft-switching inverter using integrated magnetic technique. In Proceedings of the 13th IEEE Conference on Industrial Electronics and Applications, ICIEA 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 18-23. (Proceedings of the 13th IEEE Conference on Industrial Electronics and Applications, ICIEA 2018). doi: 10.1109/ICIEA.2018.8397682

Design of SiC MOSFET high power density soft-switching inverter using integrated magnetic technique

Abstract

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UN SDGs

Keywords

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