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Design of pre-amplifiers for photoelectric detector

  • Ming Yuan Ren
  • , Li Tian*
  • , Wei Wang
  • , Xiao Wei Liu
  • , Zhi Gang Mao
  • *Corresponding author for this work
  • Harbin Institute of Technology
  • Harbin University of Science and Technology

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper presents the design of low noise CMOS pre-amplifiers based on photoelectric detection systems, which can directly affect the detecting precision of the whole systems. The design of pre-amplifier circuit from photoelectric detector was introduced. The photoelectric conversion circuit, amplifier circuit bandwidth, amplifier circuit noise, amplifier circuit stabilization and other questions were mainly discussed, and an amplifier circuit capable of effectively decreasing the noise, the temperature drift and a large dynamic range was designed. This paper analyzes the sources of photoelectric detection circuit internal noise, and gives the formulas of internal noise, designs a variable equivalent load photoelectric conversion circuit, and is verified by experiments. Then the result is used to reduce the noise of CMOS based operational amplifiers and finally implement the design work of pre-amp using 0.5μm CMOS Technology.

Original languageEnglish
Title of host publicationVehicle, Mechatronics and Information Technologies
Pages3308-3311
Number of pages4
DOIs
StatePublished - 2013
Event2013 International Conference on Vehicle and Mechanical Engineering and Information Technology, VMEIT 2013 - Zhengzhou, Henan, China
Duration: 17 Aug 201318 Aug 2013

Publication series

NameApplied Mechanics and Materials
Volume380-384
ISSN (Print)1660-9336
ISSN (Electronic)1662-7482

Conference

Conference2013 International Conference on Vehicle and Mechanical Engineering and Information Technology, VMEIT 2013
Country/TerritoryChina
CityZhengzhou, Henan
Period17/08/1318/08/13

Keywords

  • CMOS
  • Photoelectric detector
  • Pre-amplifier

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