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Design of multi-channel time-delayed IGBT driving circuit based on synchronous signals

  • Jingwei Shi*
  • , Chunzhi Gong
  • , Kexin Zhang
  • , Xiubo Tian
  • , Shiqin Yang
  • *Corresponding author for this work
  • Harbin Institute of Technology

Research output: Contribution to journalArticlepeer-review

Abstract

A multi-channel time-delayed IGBT(Insulated Gate Bipolar Transistor) driving circuit system is designed based on synchronous signals, which is applied to Marx circuit for outputting soft-adjustable discrete-step high-voltage pulse. The high-voltage channels are isolated from each other. Experimental results show that, the driving circuit has the maximum time delay of 30 μs. It has under-voltage protection, and provides minus-voltage pulses to gate and applies MOSFET to inhibit the gate-emitter voltage oscillation. The high-voltage isolation transformer of driving signal has a compact structure of single primary winding and multiple secondary windings to drive multi-stage Marx circuit with good expandability. Its over-current protection has fast response, which turns IGBT off reliably to suppress the short-circuit current within 2 μs. It is applied in the ten-stage Marx circuit to output 10 kV-30 μs pulse with up to ten steps.

Original languageEnglish
Pages (from-to)123-126
Number of pages4
JournalDianli Zidonghua Shebei/Electric Power Automation Equipment
Volume32
Issue number1
StatePublished - Jan 2012

Keywords

  • Discrete-step pulse
  • Driving circuit
  • Insulated gate bipolar transistors
  • MOSFETs
  • Marx circuit
  • Time delay
  • Under-voltage protection

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