@inproceedings{3e469ac4d38044d49b1f95687b4ee4b4,
title = "Demonstration of GaN/AlGaN heterojunction for dual band detection",
abstract = "A GaN/AlGaN heterojunction has been grown on c-plane sapphire substrate by metal organic chemical vapor deposition (MOCVD). Optical properties of this GaN/AlGaN heterojunction in ultraviolet and infrared regions are investigated. UV absorption is due to the band gap of GaN and AlGaN layer, and infrared absorption is attributed to the free carrier absorption.",
keywords = "GaN/AlGaN heterojunction, infrared, ultraviolet",
author = "Shujie Jiao and Dongbo Wang and Fengyun Guo and Jinzhong Wang and Hongtao Li and Liancheng Zhao",
year = "2011",
doi = "10.1063/1.3666300",
language = "英语",
isbn = "9780735410022",
series = "AIP Conference Proceedings",
pages = "149--150",
booktitle = "Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30",
note = "30th International Conference on the Physics of Semiconductors, ICPS-30 ; Conference date: 25-07-2010 Through 30-07-2010",
}