@inproceedings{77f80478cb0649d58e12433c83fd710a,
title = "Demonstration of β-Ga2O3 Lateral Heterojunction Diodes with 450 V Single-event Burnout Voltage",
abstract = "This work investigates the single-event effects (SEE) tolerance of lateral β-Ga2O3/NiO heterojunction diodes (HJDs). Under tantalum-ion irradiation with linear energy transfer (LET) of 82.1 MeV•cm2/mg, the lateral HJDs exhibit markedly superior SEE robustness than vertical devices. The ratio of single-event burnout voltage (VSEB) to static breakdown voltage reaches approximately 0.4, substantially surpassing our previously reported vertical HJDs. Meanwhile, the specific ON-resistance of lateral HJDs with an anode-to-cathode length (LAC) of 10 and 20 μm is calculated to be 13.0 and 36.8 mΩ•cm2 respectively, which is comparable to that of vertical diodes. Moreover, the lateral HJDs with LAC of 20 μm present excellent reliability exposed to heavy-ion irradiation under a reverse bias of 450 V attributed to elongated junction termination extension (JTE) mitigating the surface electric field. This work demonstrates the potential of β-Ga2O3 lateral diodes for future radiation-hardened applications.",
keywords = "irradiation, lateral HJDs, p-NiO, single-event burnout, single-event effects, β-GaO",
author = "Song He and Jinyang Liu and Guangwei Xu and Ziyuan Wang and Weibing Hao and Da Yu and Tianqi Wang and Jie Luo and Jie Liu and Xuanze Zhou and Shu Yang and Shibing Long",
note = "Publisher Copyright: {\textcopyright} 2026 IEEE.; 38th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2026 ; Conference date: 24-05-2026 Through 28-05-2026",
year = "2026",
doi = "10.1109/ISPSD64561.2026.11553930",
language = "英语",
series = "Proceedings of the International Symposium on Power Semiconductor Devices and ICs",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "277--280",
booktitle = "2026 IEEE 38th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2026",
address = "美国",
}