Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes

Muhammad Usman; Kiran Saba; Dong Pyo Han; Nazeer Muhammad; Shabieh Farwa; Rafique Muhammad; Tanzila Saba

doi:10.1063/1.5010241

Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes

Muhammad Usman
, Kiran Saba
, Dong Pyo Han
, Nazeer Muhammad^*
, Shabieh Farwa
, Rafique Muhammad
, Tanzila Saba

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

In this work, theoretical investigation of the influence of Auger recombination coefficient and built-in polarization field on the internal quantum efficiency (IQE) in terms of lateral-vertical single quantum well (SQW) as well as multiquantum well (MQW) GaN-based blue light-emitting diodes are presented. The degradation effect of the built-in polarization field on the IQE of vertical light-emitting diodes is used to strengthening the Auger recombination coefficient in comparison to lateral light-emitting diodes. This result has been found consistent in both single-as well as multi-quantum well structures. In addition, when Auger recombination coefficient has been included in the analysis, vertical multiquantum well structure shows more degradation in the IQE in comparison to the lateral structures. The effect has been dominant in vertical MQW case.

Original language	English
Article number	015005
Journal	AIP Advances
Volume	8
Issue number	1
DOIs	https://doi.org/10.1063/1.5010241
State	Published - 1 Jan 2018
Externally published	Yes

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title = "Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes",

abstract = "In this work, theoretical investigation of the influence of Auger recombination coefficient and built-in polarization field on the internal quantum efficiency (IQE) in terms of lateral-vertical single quantum well (SQW) as well as multiquantum well (MQW) GaN-based blue light-emitting diodes are presented. The degradation effect of the built-in polarization field on the IQE of vertical light-emitting diodes is used to strengthening the Auger recombination coefficient in comparison to lateral light-emitting diodes. This result has been found consistent in both single-as well as multi-quantum well structures. In addition, when Auger recombination coefficient has been included in the analysis, vertical multiquantum well structure shows more degradation in the IQE in comparison to the lateral structures. The effect has been dominant in vertical MQW case.",

author = "Muhammad Usman and Kiran Saba and Han, \{Dong Pyo\} and Nazeer Muhammad and Shabieh Farwa and Rafique Muhammad and Tanzila Saba",

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doi = "10.1063/1.5010241",

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TY - JOUR

T1 - Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes

AU - Usman, Muhammad

AU - Saba, Kiran

AU - Han, Dong Pyo

AU - Muhammad, Nazeer

AU - Farwa, Shabieh

AU - Muhammad, Rafique

AU - Saba, Tanzila

PY - 2018/1/1

Y1 - 2018/1/1

N2 - In this work, theoretical investigation of the influence of Auger recombination coefficient and built-in polarization field on the internal quantum efficiency (IQE) in terms of lateral-vertical single quantum well (SQW) as well as multiquantum well (MQW) GaN-based blue light-emitting diodes are presented. The degradation effect of the built-in polarization field on the IQE of vertical light-emitting diodes is used to strengthening the Auger recombination coefficient in comparison to lateral light-emitting diodes. This result has been found consistent in both single-as well as multi-quantum well structures. In addition, when Auger recombination coefficient has been included in the analysis, vertical multiquantum well structure shows more degradation in the IQE in comparison to the lateral structures. The effect has been dominant in vertical MQW case.

AB - In this work, theoretical investigation of the influence of Auger recombination coefficient and built-in polarization field on the internal quantum efficiency (IQE) in terms of lateral-vertical single quantum well (SQW) as well as multiquantum well (MQW) GaN-based blue light-emitting diodes are presented. The degradation effect of the built-in polarization field on the IQE of vertical light-emitting diodes is used to strengthening the Auger recombination coefficient in comparison to lateral light-emitting diodes. This result has been found consistent in both single-as well as multi-quantum well structures. In addition, when Auger recombination coefficient has been included in the analysis, vertical multiquantum well structure shows more degradation in the IQE in comparison to the lateral structures. The effect has been dominant in vertical MQW case.

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U2 - 10.1063/1.5010241

DO - 10.1063/1.5010241

M3 - 文章

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JO - AIP Advances

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Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes

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