Degradation behaviour of electrical properties of inverted metamorphic four-junction (IMM4J) solar cells under 1 MeV electron irradiation

Yanqing Zhang; Guoliang Ma; Tianqi Wang; Chaoming Liu; Mingxue Huo; Chunhua Qi

doi:10.1109/IPFA47161.2019.8984864

Degradation behaviour of electrical properties of inverted metamorphic four-junction (IMM4J) solar cells under 1 MeV electron irradiation

Yanqing Zhang
, Guoliang Ma
, Tianqi Wang
, Chaoming Liu
, Mingxue Huo
, Chunhua Qi^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this study, the degradation effects of inverted metamorphic four-junction (IMM4J) solar cells were investigated after 1 MeV electron irradiation using spectral response and electrical property measurements. The results show that, similar to traditional tri-junction (TJ) GaInP/GaAs/Ge solar cells, the electrical properties (such as I_sc, V_oc, and P_max) degrade as a function of logϕ, where ϕ represents the electron fluence. In particular, the degradation of V_oc is more serious than that of I_sc because of the sum rule for V_oc and the limit rule for I_sc in IMM4J cells. Analysis of the spectral response curves indicates that, unlike traditional TJ cells, the In_0.3Ga_0.7As (1.0 eV) sub-cell exhibits the most severe damage in the irradiated IMM4J cells and the In_0.58Ga_0.42As sub-cell becomes a limits part for the electrical properties of the IMM4J solar cells.

Original language	English
Title of host publication	26th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728135526
DOIs	https://doi.org/10.1109/IPFA47161.2019.8984864
State	Published - Jul 2019
Event	26th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2019 - Hangzhou, China Duration: 2 Jul 2019 → 5 Jul 2019

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference	26th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2019
Country/Territory	China
City	Hangzhou
Period	2/07/19 → 5/07/19

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10.1109/IPFA47161.2019.8984864

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Zhang, Y., Ma, G., Wang, T., Liu, C., Huo, M., & Qi, C. (2019). Degradation behaviour of electrical properties of inverted metamorphic four-junction (IMM4J) solar cells under 1 MeV electron irradiation. In 26th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2019 Article 8984864 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPFA47161.2019.8984864

Zhang, Yanqing ; Ma, Guoliang ; Wang, Tianqi et al. / Degradation behaviour of electrical properties of inverted metamorphic four-junction (IMM4J) solar cells under 1 MeV electron irradiation. 26th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2019. Institute of Electrical and Electronics Engineers Inc., 2019. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

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title = "Degradation behaviour of electrical properties of inverted metamorphic four-junction (IMM4J) solar cells under 1 MeV electron irradiation",

abstract = "In this study, the degradation effects of inverted metamorphic four-junction (IMM4J) solar cells were investigated after 1 MeV electron irradiation using spectral response and electrical property measurements. The results show that, similar to traditional tri-junction (TJ) GaInP/GaAs/Ge solar cells, the electrical properties (such as Isc, Voc, and Pmax) degrade as a function of logϕ, where ϕ represents the electron fluence. In particular, the degradation of Voc is more serious than that of Isc because of the sum rule for Voc and the limit rule for Isc in IMM4J cells. Analysis of the spectral response curves indicates that, unlike traditional TJ cells, the In0.3Ga0.7As (1.0 eV) sub-cell exhibits the most severe damage in the irradiated IMM4J cells and the In0.58Ga0.42As sub-cell becomes a limits part for the electrical properties of the IMM4J solar cells.",

author = "Yanqing Zhang and Guoliang Ma and Tianqi Wang and Chaoming Liu and Mingxue Huo and Chunhua Qi",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 26th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2019 ; Conference date: 02-07-2019 Through 05-07-2019",

year = "2019",

month = jul,

doi = "10.1109/IPFA47161.2019.8984864",

language = "英语",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "26th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2019",

address = "美国",

}

Zhang, Y, Ma, G, Wang, T , Liu, C , Huo, M & Qi, C 2019, Degradation behaviour of electrical properties of inverted metamorphic four-junction (IMM4J) solar cells under 1 MeV electron irradiation. in 26th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2019., 8984864, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, Institute of Electrical and Electronics Engineers Inc., 26th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2019, Hangzhou, China, 2/07/19. https://doi.org/10.1109/IPFA47161.2019.8984864

Degradation behaviour of electrical properties of inverted metamorphic four-junction (IMM4J) solar cells under 1 MeV electron irradiation. / Zhang, Yanqing; Ma, Guoliang; Wang, Tianqi et al.
26th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8984864 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Degradation behaviour of electrical properties of inverted metamorphic four-junction (IMM4J) solar cells under 1 MeV electron irradiation

AU - Zhang, Yanqing

AU - Ma, Guoliang

AU - Wang, Tianqi

AU - Liu, Chaoming

AU - Huo, Mingxue

AU - Qi, Chunhua

PY - 2019/7

Y1 - 2019/7

N2 - In this study, the degradation effects of inverted metamorphic four-junction (IMM4J) solar cells were investigated after 1 MeV electron irradiation using spectral response and electrical property measurements. The results show that, similar to traditional tri-junction (TJ) GaInP/GaAs/Ge solar cells, the electrical properties (such as Isc, Voc, and Pmax) degrade as a function of logϕ, where ϕ represents the electron fluence. In particular, the degradation of Voc is more serious than that of Isc because of the sum rule for Voc and the limit rule for Isc in IMM4J cells. Analysis of the spectral response curves indicates that, unlike traditional TJ cells, the In0.3Ga0.7As (1.0 eV) sub-cell exhibits the most severe damage in the irradiated IMM4J cells and the In0.58Ga0.42As sub-cell becomes a limits part for the electrical properties of the IMM4J solar cells.

AB - In this study, the degradation effects of inverted metamorphic four-junction (IMM4J) solar cells were investigated after 1 MeV electron irradiation using spectral response and electrical property measurements. The results show that, similar to traditional tri-junction (TJ) GaInP/GaAs/Ge solar cells, the electrical properties (such as Isc, Voc, and Pmax) degrade as a function of logϕ, where ϕ represents the electron fluence. In particular, the degradation of Voc is more serious than that of Isc because of the sum rule for Voc and the limit rule for Isc in IMM4J cells. Analysis of the spectral response curves indicates that, unlike traditional TJ cells, the In0.3Ga0.7As (1.0 eV) sub-cell exhibits the most severe damage in the irradiated IMM4J cells and the In0.58Ga0.42As sub-cell becomes a limits part for the electrical properties of the IMM4J solar cells.

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U2 - 10.1109/IPFA47161.2019.8984864

DO - 10.1109/IPFA47161.2019.8984864

M3 - 会议稿件

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T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

BT - 26th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 26th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2019

Y2 - 2 July 2019 through 5 July 2019

ER -

Zhang Y, Ma G, Wang T , Liu C , Huo M , Qi C. Degradation behaviour of electrical properties of inverted metamorphic four-junction (IMM4J) solar cells under 1 MeV electron irradiation. In 26th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8984864. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA47161.2019.8984864

Degradation behaviour of electrical properties of inverted metamorphic four-junction (IMM4J) solar cells under 1 MeV electron irradiation

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